Crystal Structure and Magnetic Properties of (Co-Ag) co-doped SnO 2 Compounds
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ORIGINAL PAPER
Crystal Structure and Magnetic Properties of (Co-Ag) co-doped SnO2 Compounds S. K. Srivastava 1 & Aakansha 2 & S. S. Baro 3 & B. Narzary 3 & D. R. Basumatary 3 & R. Brahma 3 & S. Ravi 2 Received: 18 May 2020 / Accepted: 5 September 2020 # Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract Pure SnO2, Sn0.94Co0.06O2, Sn0.91Co0.06Ag0.03O2, and Sn0.88Co0.06Ag0.06O2 compounds were synthesized by the solid-state reaction method. The structural characterization of these compounds by recording X-ray diffraction patterns (XRD) and analyzing them using Rietveld refinement analysis shows that these materials are in single-phase tetragonal rutile structure with typical lattice constant of a = b = 4.7385 Å and c = 3.1871 Å for SnO2 compound. SEM images show the formation of homogenous nanometer range spherical particles. Temperature variation of magnetization (M-T) measurements show a typical diamagnetic behavior in parent compound, while ferromagnetic (FM) to paramagnetic transition is observed in Sn0.94Co0.06O2 compound with a Curie temperature of 232.5 K. The (Co-Ag) co-doped SnO2 compounds undergo double ferromagnetic transitions. These compounds exhibit first FM transition below 620 K and another FM transition at 1108 K and 1052 K, respectively for Sn0.91Co0.06Ag0.03O2 and Sn0.88Co0.06Ag0.06O2 compounds. The measurement of magnetic hysteresis (M-H) curves at room temperature indicates the increase in coercivity and saturation magnetization values with the increase of (Co-Ag) co-doping concentration. The observed ferromagnetism was discussed based on the exchange interaction between Co2+ and Co3+ ions via oxygen vacancies. Keywords Tin oxide . (Co-Ag) co-doping . Ferromagnetism . Nanoparticles
1 Introduction Since last several years, researchers are constantly putting their efforts to explore novel materials which can be integrated for spintronics devices, such as magneto-resistive sensors, magneto-resistive memories, and storage devices [1]. In spintronics devices, it is expected to exploit both charge and spin of an electron for carrying information and for storing data, respectively. Thus, spintronics devices are anticipated to have lots of advantages over conventional semiconductor devices, such as the non-volatility, higher data processing speed,
* S. K. Srivastava [email protected] 1
Department of Physics, Central Institute of Technology Kokrajhar, Kokrajhar 783370, India
2
Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039, India
3
Department of Physics, Bodoland University, Kokrajhar 783370, India
and lower electric power consumption. Among the various explored materials which can be utilized for spintronics applications, diluted ferromagnetic semiconductors (DMS) were studied extensively during last many years [1–6]. Dilute ferromagnetism has been reported in several wide band-gap semiconductor oxides, such as SnO2, ZnO, TiO2, and ZrO2 doped with the transition metal (TM) elements such as Mn, Co, Fe, and Cu [7–9]. The magnetic coup
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