Cu-doped ZnS coatings for optoelectronics with enhanced protection for UV radiations
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Cu-doped ZnS coatings for optoelectronics with enhanced protection for UV radiations Kadhim R. Gbashi1,* 1
and Abbas Khammas Hussein1
Nanotechnology and Advanced Materials Research Center, University of Technology, Baghdad, Iraq
Received: 4 May 2020
ABSTRACT
Accepted: 17 August 2020
Molecular dopants are of great importance in nano-chemical compounds by improving the function of inorganic electronic devices. In this article, Cu:ZnS (CZS) powders were made using the chemical method. Thin films were deposited by the physical method. The CZS films showed cubic crystal structures with a single hexagonal peak. The impact of an increase in Cu2? dopants was investigated not only in reducing the grain size but also in reducing the optical energy gap and deviation parameters of the lattice constants. The estimated energy gaps of CZS nanostructures (NSs) were (3.70, 3.66, 3.0, and 3.76 eV) for Cu dopant (0, 1.5, 3.0, and 4.5 at.%); an indication of a blueshift. Redshift was also noticed for Cu dopant 4.5% due to interstitial sites. Moreover, the transmittance for all specimens was (70–95%) in the visible and near IRregion and reduced in the UV range (\ 400 nm). The decrease in light transmittance occurred in the UV range when the Cu2? concentration increased. Besides, the study revealed a reduction in the power loss of the thin film indicating high quality and a highly optimized electrical and electronic system. The Neural Network was utilized to obtain validation of results by the theoretical study.
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Springer Science+Business
Media, LLC, part of Springer Nature 2020
1 Introduction The preparation of Cu:ZnS nanoparticles (NPs) have been searched on a large scale [1–3]. However, a study of the impact of Cu2? ion ratio on structural, electrical, and physical characteristics of these nanoparticles has been partially considered [4, 5]. CZS film was used as the active layer in energy generation. Sure, this composition is very attractive for low-cost device applications due to its abundance of starting materials. Zinc sulfide film was used as a
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https://doi.org/10.1007/s10854-020-04280-z
light source for viewing screen, buffer layer for solar energy [6, 7]. It has been used in the field of lightemitting (LE) diode in the blue and UV regions due to its high-energy gap (3.70 eV) [8]. The composition has also been used in electroluminescent materials [9], modulators [10], semiconductor n-type in solar energy [11], photoconductors, and photovoltaic devices [12]. A little amount of metallic concentration was doped in the ZnS compound to increase the effectiveness of phosphorous compounds [13]. It emits radiation frequencies, an indication of the
J Mater Sci: Mater Electron
combined defects. Technologically, ZnS is better the others (chalcogenides) such as ZnSe, CdS, and thus, it acts as a favorable host semiconductor. Elements like (Ag, Cu, Mn, and Tb) ions are widely used as a defect in zinc sulfide sites. From different defections, copper is an outstanding luminescen
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