Deposition of TiN Films by Reactive Sputtering with Targets Facing Type of High Rate Sputtering
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DEPOSITION OF TiN FILMS BY REACTIVE SPUTTERING WITH TARGETS FACING TYPE OF HIGH RATE SPUTTERING
M. Naoe* and Y. Hoshi** * Tokyo Institute of Technology, Meguro-ku, Tokyo 152 Japan ** Tokyo Institute of Polytechnics, Atsugi-shi, Kanagawa-ken 243-02 Japan
ABSTRACT TiN films ljm thick were deposited on SKH55 alloy substrate at various substrate bias voltage by a reactive sputtering of Ti target in a mixture of Ar (1 mTorr) and N2 (1 mTorr) with a Target Facing type of high rate sputtering apparatus. The color of the film changes in the order of yellow, golden, silver and golden as the substrate bias voltage increases from 0 to 200 V. The reflection ratio and Vicker's hardness of the film also changes with the bias voltage. Besides, the change of the reflection factor corresponds well to the change of theVicker's hardness of the film. The films with silver color and maximum reflection ratio which are obtained at a rf bias voltage around 100 V, have the largest value of the Vicker's hardness about 3500. While, the films with golden color and small reflection factor, which are obtained at both rf bias voltage around 80 V and 150 V, have the lowest Vicker's hardness of about 1500.
INTRODUCTION It is well known that TiN is one of the useful coating materials to improve wear resistance and various coating techniques such as ion plating, sputtering etc. are used for the formation of the films. We have developed a new high rate sputtering technique named Target Fac3 ing type of high rate sputtering (TF sputtering) method1- ), and show the superiority of the sputtering technique compared to the other sputtering techniques. Therefore, we have applied the TF sputtering technique for the formation of TiN films by a reactive sputtering under the condition of various rf substrate bias voltages and investigate the film deposition process. In this paper, the special features in the preparation of TiN films by a reactive sputtering of Ti with dc TF sputtering and the effect of ion bombardment to the film surface during deposition on the properties of the films will be presented.
EXPERIMENTAL Figurel shows the schematic diagram of a dc TF sputtering apparatus used in this work. Two Ti disks (99.9 % purity) same in size (10 cm in diameter) were used as the target and were arranged parallel facing their planes to be sputtered. The distance between the targets was fixed at 10 cm. A magnetic field of about 125 Oe at the midpoint between the targets was applied perpendicular to the target surface in order to confine the high energy T-electrons and promote the ionization of gas in the space between the targets. As a result, high density plasma is easily produced in the space, which realizes high rate sputtering. In conventional diode sputtering system including planer magnetron type sputtering, not only the high energy r-electrons but also the high energy particles produced from negative ions emitted from the targets bombards the substrate during sputtering. But the Target Facing type arrangement shown in Fig.1 can make these high energy
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