Direct Bandgap Quantum Wells on GaP
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165 Mat. Res. Soc. Symp. Proc. Vol. 448 0 1997 Materials Research Society
calibration point, the compositions of the quantum wells were estimated from the group III precursor flow rates. High-resolution cross-section TEM was employed to measure the thicknesses of the quantum wells. RESULTS AND DISCUSSIONS According to the model-solid calculation (reviewed in Ref. 5), the band line-up between GaInP and GaP is type-II for In concentrations up to 58%; the F-point GaInP band edge does not fall below the X-point GaP band edge until the In concentration goes up to 58%. Therefore, an electronic confined state does not exist for much of In concentrations. Without both electrons and holes confined, low emission efficiency is expected for low In concentrations (
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