Effect of Argon and Hydrogen on Deposition of Silicon from Tetrachlorosilane in Cold Plasmas
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Mat. Res. Soc. Symp. Proc. Vol. 54. ' 1986 Materials Research Society
716
(total and local reaction rates), determination of plasma species, measurements of charge-carrier density and electron temperature, and measurements of the deposition rates and chlorine contents of the films under different deposition conditions. The plasma was sampled and the films deposited separately in three 'regions labeled by the letters H, G, and F [10] (Fig. 1). Position H was located 1.5 cm before the plasma excitation center, position G was at the plasma center, and position F was 1.5 cm after it. This form of measurement gives a kinetic picture of the plasma processes and allows rates of the reactions taking place in the plasma to be determined by the method of Field, Franklin, and Munson [12]. GASSTREAM
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