Effect of Gd 3+ Doping on Linear and Nonlinear Optical Properties of PbI 2 /FTO Thin Films for Optoelectronic and Nonlin
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Effect of Gd3+ Doping on Linear and Nonlinear Optical Properties of PbI2/FTO Thin Films for Optoelectronic and Nonlinear Applications Mohd. Shkir1 · T. Alshahrani2 · Kamlesh V. Chandekar3 · M. Aslam Manthrammel1 · M. A. Sayed1,4 · I. M. Ashraf1,5 · Baskaran Palanivel6 · S. AlFaify1 Received: 18 June 2020 / Accepted: 21 September 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract Herein, we have developed the thin Gd@PbI2 films on FTO via a facile spin coating route and subjected to various studies. The formation of (001) oriented hexagonal phase Gd:PbI2/FTO films was confirmed by X-ray diffraction & FT-Raman spectroscopy analyses. The size was determined through Scherrer formula in 11–16 nm range. The doping of Gd and its homogeneity was tested and approved by EDX and SEM e-mapping studies. The Gd doping impact on surface morphology was inspected via SEM images and found very low dimension grains formation throughout the films area. Tauc’s formula was employed to obtain energy gap and found in 2.46–2.74 eV for all Gd@PbI2 films. Absorption and refractive indices were estimated in 0.034–1.2 and 1.4–11 between 395 and 2400 nm wavelength regions. Respective dielectric constant and loss values were noted between 3.5 and 112, and 0.13 and 1.4, signify high dielectric constant and low loss values. The optical conductivity was calculated of 1016 order for all Gd@PbI2 films. SELF and VELF related values were also determined. The values of nonlinear optics related parameters were also calculated and revealed that the grown films are potential candidates for opto-nonlinear devices. Keywords Gd@PbI2/FTO thin films · Structural and vibrational studies · Morphological properties · Optical properties · Dielectric-electrical properties · Nonlinear properties
1 Introduction
* Mohd. Shkir [email protected]; [email protected] 1
Advanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, Abha 61413, Saudi Arabia
2
Department of Physics, College of Science, Princess Nourah Bint Abdulrahman University, Riyadh 11671, Saudi Arabia
3
Department of Physics, Rayat Shikshan Sanstha’s, Karmaveer Bhaurao Patil College, Vashi, Navi Mumbai 400703, India
4
Faculty of Science, Physics Department, Al-Azhar University, Assiut 71524, Egypt
5
Department of Physics, Faculty of Science, Aswan University, Aswan 81511, Egypt
6
Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kancheepuram, Tamil Nadu 603 203, India
The p-type semiconductor lead iodide has fascinated the research community over the years due to its fascinating properties that make it suitable for wide range of applications in the fields of radiation detectors, photodetectors, medical imaging and high efficiency solar cells etc. [1–4]. Ever since the emerging perovskite solar cell technology has been identified as the biggest breakthrough research in the current era, no other samples could efficiently replace the P
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