Electrical Characterization of Semiconductor Materials and Devices
Semiconductor materials and devices continue to occupy a preeminent technological position due to their importance when building integrated electronic systems used in a wide range of applications from computers, cell-phones, personal digital assistants, d
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20. Electrical Characterization of Semiconductor Materials and Devices
Electrical Cha
The continued evolution of semiconductor devices to smaller dimensions in order to improve performance – speed, functionality, integration density and reduced cost – requires layers or films of semiconductors, insulators and metals with increasingly high quality that are well-characterized and that can be deposited and patterned to very high precision. However, it is not always the case that improvements in the quality of ma-
20.1 Resistivity ........................................... 410 20.1.1 Bulk Resistivity ......................... 410 20.1.2 Contact Resistivity ..................... 415 20.2 Hall Effect ........................................... 418 20.2.1 Physical Principles..................... 419 20.2.2 Hall Scattering Factor................. 420 20.3 Capacitance–Voltage Measurements ...... 20.3.1 Average Doping Density by Maximum–Minimum HighFrequency Capacitance Method ... 20.3.2 Doping Profile by High-Frequency and High–Low Frequency Capacitance Methods.. 20.3.3 Density of Interface States .......... 20.4 Current–Voltage Measurements ............ 20.4.1 I–V Measurements on a Simple Diode ..................... 20.4.2 I–V Measurements on a Simple MOSFET ................... 20.4.3 Floating Gate Measurements ......
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20.5 Charge Pumping .................................. 428 20.6 Low-Frequency Noise........................... 20.6.1 Introduction ............................. 20.6.2 Noise from the Interfacial Oxide Layer .. 20.6.3 Impedance Considerations During Noise Measurement.........
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20.7 Deep-Level Transient Spectroscopy........ 434 References .................................................. 436 low-frequency noise, charge pumping and deep-level transient spectroscopy techniques.
terials have kept pace with the evolution of integrated circuit down-scaling. An important aspect of assessing the material quality and device reliability is the development and use of fast, nondestructive and accurate electrical characterization techniques to determine important parameters such as carrier doping density, type and mobility of carriers, interface quality, oxide trap density, semiconductor bulk defect density, con-
Part B 20
Semiconductor materials and devices continue to occupy a preeminent technological position due to their importance when building integrated electronic systems used in a wide range of applications from computers, cell-phones, personal digital assistants, digital cameras and electronic entertainment systems, to electronic instrumentation for medical diagnositics and environmental monitoring. Key ingredients of this technological dominance have been the rapid advances made in the quality and processing of materials – semiconductors, conductors and dielectrics – which have given metal oxide semiconductor device technology its important characteristics of negligible standby power dissipation, good input–output isolation, surface potential control an
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