Electrical Property of Vertically Grown Carbon Nanotube and its Application to the Nanofunctional Devices
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Electrical Property of Vertically Grown Carbon Nanotube and Its Application to the Nanofunctional Devices Jaeuk Chu٭, Kwangseok Jeong٭, Eunju Bae٭, Inkyeong Yoo† and Wonbong Choi†
Materials and Devices Lab†., The National Program for Tera-Level Nanodevices ٭Samsung Advanced Institute of Technology, Suwon, Korea
Jujin Kim Department of Physics, Chonbuk National University, Chonju 561-756, Korea Corresponding Author : [email protected], [email protected] 82-31-280-9351
ABSTRACT A highly ordered porous alumina array which hole size is decreased down to 20nm was fabricated by a two step anodization method. Carbon Nanotube was grown vertically with thermal CVD at 600~700℃. By using rapid thermal annealing method, low-ohmic contact was formed between multi wall nanotubes and metal electrode and its resistance shows tens to hundreds Ω. The alumina layer which is existed between nanotube and electrode acts as a barrier for conductance. The resistance of carbon nanotube shows the temperature(T-1) dependence at 4.21K < T < 19.9K and semiconducting behavior at this temperature region.
INTRODUCTION The 10 years of carbon nanotube (CNT) since the discovery of 19911 have been a marvelous period for CNT itself and scientists studying the various properties of CNT. The electrical property, especially, can be varied from semiconducting to metallic according to the CNT’s diameter, chirallity and doping status.2-4 Multi wall nanotube(MWNT) has a complicate structure rather than single wall nanotube(swnt) having a ideal one dimensional wire structure but has a merit to the easiness of synthesis and purification. The research for device using mwnt has been studied by many but the difficulties of reproducible high quality nanotube-control and selective nano-positioning to device tool remain as a barrier for advanced device. In order to overcome these barriers, CNT is grown selectively in anodic aluminum oxide(AAO) template5 and is characterized electrical transport property. The feasibility of selectively grown CNT to the nano-functional device has been investigated
EXPERIMENTAL Carbon nanotube arrays have been fabricated on porous anodic aluminum oxide (AAO) which is controlled by conventional anodization method.5 High purity aluminum sheet (99.999%) was used as a substrate and highly ordered nano-pore was W9.3.1
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Figure 1. SEM images of carbon nanotube in porous alumina and schematic : (a) Top surface of 20nm nanotube after removing graphite layer. (b) the back side of nanotube on AAO after etching away the aluminum oxide with ion milling. fabricated by anodization technique. Hole diameter is 20nm and fabricated by using sulfuric acid as a anodizing solution. Carbon nanotube was synthesized in the pores by thermal CVD at the temperature range of 600~700°C without catalyst. Figure 1 is scanning electron microscopy(SEM) images showing a both(top, bottom) view of the nanotube after etching the AAO template by ion milling. We carried out two probe conductance measurement of nanotube on AAO followed by
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