Erbium-doped amorphous- Si-C-O matrix (a-SiC x O y :Er) - A novel silicon-based material for near-infrared optoelectroni
- PDF / 250,819 Bytes
- 6 Pages / 612 x 792 pts (letter) Page_size
- 30 Downloads / 170 Views
V6.5.1
Erbium-doped amorphous- Si-C-O matrix (a-SiCxOy:Er) - A novel silicon-based material for near-infrared optoelectronic applications Spyros Gallis, Mengbing Huang, Vasileios Nikas, Harry Efstathiadis, Eric Eisenbraun and Alain E. Kaloyeros, College of Nanoscale Science and Engineering, The University at Albany-SUNY, Albany, New York 12203, Ei Ei Nyein and Uwe Hommerich, Department of Physics, Hampton University, Hampton, VA 23668.
ABSTRACT We have synthesized amorphous- SiCxOy (a-SiCxOy) (x, y: 0 - 1.65) materials via thermal chemical vapor deposition (TCVD) at 800oC using a single source oligomer, 2,4,6-trimethyl2,4,6-trisila-heptane (C7H22Si3) and ultra-high purity oxygen (O2). The Er-doped SiCxOy materials exhibited a strong room-temperature photoluminescence (PL) at ~1540 nm at an excitation wavelength of 496.5 nm. Furthermore, the infrared PL intensity was found to be highly dependent on the compositions of carbon and oxygen, with the maximum PL intensity obtained for an Er-doped SiC0.50O1.00 thin film, which exhibited a ~20-times enhancement in the PL intensity as opposed to the Er-doped SiO2 control samples. The PL intensity decreased significantly as the matrix evolves into either the SiC-like or SiO2-like material. Fourier transform infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy (XPS) were used to characterize the local elemental electronic environment in a-SiCxOy. Our work indicates a strong correlation between the emission of Er luminescence and the formation of SiC-O bonding in materials.
INTRODUCTION It is well documented that Er ions diluted in a solid matrix, in the 3+ charge state, can emit luminescence at 1540 nm wavelength, corresponding to the internal 4f-shell transition (4I13/2 → 4 I15/2) of Er3+ ions. From a technological point of view, this is an important wavelength, as silicabased optical fibers possess a minimum in attenuation near this infrared region of the optical spectra.[1] In addition, there has been a great deal of interest in the realization of planar optical waveguide systems operating at the technologically important wavelength of 1540 nm using erbium-doped materials.[2] In this context, several works have been reported on the Er luminescence performance employing different Si-based matrices; silicon-nitride (Si3N4),[3] nanocrystalline Si (nc-Si) in silica[4] and, most recently, amorphous silicon-carbide (a-SiC).[5] However, despite the progress towards efficient Er-related PL from these matrices, there is still a need for other matrices in order to improve the Er luminescence efficiency.
Downloaded from https://www.cambridge.org/core. Columbia University Libraries, on 08 Apr 2019 at 14:05:48, subject to the Cambridge Core terms of use, available at https://www.cambridge.org/core/terms . https://doi.org/10.1557/PROC-866-V6.5
V6.5.2
Particularly, due to their low dielectric constant (k), and excellent mechanical properties, amorphous oxygenated silicon-carbide alloys (a-SiCxOy) have been receiving much attention in copper interconnect- related applica
Data Loading...
