Erratum to: 2D Hexagonal SnTe monolayer: a quasi direct band gap semiconductor with strain sensitive electronic and opti
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THE EUROPEAN PHYSICAL JOURNAL B
Erratum
Erratum to: 2D Hexagonal SnTe monolayer: a quasi direct band gap semiconductor with strain sensitive electronic and optical properties? Eur. Phys. J. B (2020) 93: 32, https://doi.org/10.1140/epjb/e2020-100543-6 Negin Fatahi 1 , D.M. Hoat 2,3,a , Amel Laref 4 , Shirin Amirian 1 , A.H. Reshak 5,6,7 , and Mosayeb Naseri 1 1 2
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Department of Physics, Kermanshah Branch, Islamic Azad University, Kermanshah, Iran Computational Laboratory for Advanced Materials and Structures, Advanced Institute of Materials Science, TonDuc Thang University, Ho Chi Minh City, Vietnam Faculty of Applied Sciences, Ton Duc Thang University, Ho Chi Minh City, Vietnam Department, College of Science, King Saud University, Riyadh, Saudi Arabia Physics Department, College of Science, Basrah University, Basrah, Iraq Nanotechnology and Catalysis Research Center (NANOCAT), University of Malaya, Kuala Lumpur 50603, Malaysia Department of Instrumentation and Control Engineering, Faculty of Mechanical Engineering, CTU in Prague, Technicka 4, Prague 6 166 07, Czech Republic Received 29 May 2020 Published online 6 July 2020 c EDP Sciences / Societ`
a Italiana di Fisica / Springer-Verlag GmbH Germany, part of Springer Nature, 2020
The fourth author’s name, Shorin Amirian, in the published article was wrong. It has been corrected to Shirin Amirian.
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The online version of the original paper can be found at https://doi.org/10.1140/epjb/e2020-100543-6 e-mail: [email protected]
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