Fabrication and electrical properties of 0.7BiFeO 3 -0.3PbTiO 3 films on stainless steel by the sol-gel method
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Fabrication and electrical properties of 0.7BiFeO3-0.3PbTiO3 films on stainless steel by the sol-gel method Chen Zhao, Dan Jiang, Shundong Bu and Jinrong Cheng School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China ABSTRACT Ferroelectric 0.7BiFeO3-0.3PbTiO3 (BFO-PT) films were deposited on stainless steel substrates by the sol-gel method. A thin layer of PbTiO3 (PT) was introduced between the substrates and BFO-PT films in order to decrease the annealing temperature of BFO-PT films. X-ray diffraction analysis reveals that BFO-PT films could be well crystallized into the perovskite structure at about 575 oC. Scanning electron microscope (SEM) images show that BFO-PT thin films have grain size of about 50~60 nm. Our results indicated BFO-PT films deposited on stainless steel substrates maintained the excellent ferroelectric properties with remnant polarization of about 40~50 μC/cm2. INTRODUCTION xBiFeO3-(1-x)PbTiO3 (BFO-PT) solid solutions have attract much attention due that a large c/a ratio of more than 1.18 and high Curie temperature of 623 oC could be achieved in the vicinity of morphotropic phase boundary (MPB) of x≈0.7 [1]. The excellent piezoelectric and ferroelectric properties of bulk BFO-PT are expected to be duplicated in BFO-PT thin films for potential applications of micro electro mechanical system (MEMS). It has been reported the La modified BFO-PT thin films deposited on platinized Si substrates exhibit good dielectric and ferroelectric properties [2]. The obvious photo-electric responses have also been observed in BFO-PT films on indium tin oxide (ITO) substrates [3]. The most present research indicated that BFO-PT films are excellent multifunctional materials integrating electrical, optical and magnetic properties simultaneously. Ferroelectric thin films deposited on base metal substrates have some advantages over the films on conventional Si substrates, which are beneficial to integrating the functional films with engineering system [4-5]. Base metal could serve as both substrate and electrode, allowing a easy process for device fabrication by avoiding the complex micro-machined processes of Si based materials. Pb(Zr,Ti)O3 (PZT) thin films with excellent ferroelectric and piezoelectric properties have been successfully deposited on Ti, Ni, and stainless steel (SS) substrates [6-8]. Addition of a buffer layer, such as PbTiO3, conductive LaNiO3 et al. plays an important role to balance the thermal and lattice mismatch between the films and metal [9]. It is nature of us to prepare BFOPT films on metal exploring the novel multifunctional properties of such integration. In this work, BFO-PT films were prepared on a PT-coated stainless steel substrates by the sol-gel method. The annealing temperature and electrical properties of BFO-PT films for different thicknesses were characterized and investigated.
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EXPERIMENT DETAILS 0.7BiFeO3-0.3PbTiO3 (BFO-PT) thin films were fabricated on stainless steel substrates by the sol-gel method. The raw materials were bismuth nitrat
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