Fundamentals of III-V Semiconductor MOSFETs
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital c
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Serge Oktyabrsky • Peide D. Ye Editors
Fundamentals of III-V Semiconductor MOSFETs
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Editors Serge Oktyabrsky College of Nanoscale Science & Engineering University at Albany - SUNY, Albany 255 Fuller Road Albany, NY 12203 USA [email protected]
Peide D. Ye Birck Nanotechnology Center Purdue University 1205 W. State Street West Lafayette IN 47907-2057 BRK 2050 USA [email protected]
ISBN 978-1-4419-1546-7 e-ISBN 978-1-4419-1547-4 DOI 10.1007/978-1-4419-1547-4 Springer New York Dordrecht Heidelberg London Library of Congress Control Number: 2010920631 © Springer Science+Business Media LLC 2010 All rights reserved. This work may not be translated or copied in whole or in part without the written permission of the publisher (Springer Science+Business Media, LLC, 233 Spring Street, New York, NY 10013, USA), except for brief excerpts in connection with reviews or scholarly analysis. Use in connection with any form of information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed is forbidden. The use in this publication of trade names, trademarks, service marks, and similar terms, even if they are not identified as such, is not to be taken as an expression of opinion as to whether or not they are subject to proprietary rights. Printed on acid-free paper Springer is part of Springer Science+Business Media (www.springer.com)
Preface
Is it true that III-V semiconductor materials are back in play for mainstream digital ICs? Or it is just another round of interest to other-than-silicon materials when Si CMOS technology is approaching just another “fundamental limit”. There is no simple answer. Moreover, the answer depends not only on physics, materials and technologies, but on economics, demand from other industries, etc. Anyway, we would like the reader to answer these questions on his/her own. The book will help by presenting the fundamentals and current status of research on III-V compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs). We believe it is just the right time to summarize results and provide guidelines for the future efforts because of the following recent developments in digital electronics: • After almost 50 years of research, it is finally clear that there are technologies to make better-than-silicon MOSFETs. Although the efforts were not sustained during this long time period with ups and downs, this area is now very active with yet growing interest of researches and engineers in electronic industry and academia. The number of papers published recently on III-V MOSFETs are way higher than at any given time in the past. • Silicon oxide is out of play in mainstream Si CMOS. That means that the key materials advantage of silicon for CMOS circuits is gone. Introduction of high-k oxides into Si ICs makes the perspectives of III-V integration significantly more feasible. • Further scaling of transistors relaxes some of the requirements to the gate stack, such as interface t
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