GaN 2DEG Varactor-Based Impulse Suppression Module for Protection Against Malicious Electromagnetic Interference
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https://doi.org/10.1007/s11664-020-08110-0 Ó 2020 The Author(s)
INTERNATIONAL ELECTRON DEVICES AND MATERIALS SYMPOSIUM 2019
GaN 2DEG Varactor-Based Impulse Suppression Module for Protection Against Malicious Electromagnetic Interference CHIEN-FU SHIH,1,7 LIANN-BE CHANG ,2,3,4,8 MING-JER JENG,1,3,9 YULI HSIEH,1,5,10,11 YING-CHANG LI,6,12 and ZI-XIN DING1,13 1.—Department of Electronics Engineering, Chang Gung University, Guishan, Taoyuan 333, Taiwan. 2.—Department of Materials Engineering, Ming Chi University of Technology, Taishan, New Taipei City 243, Taiwan. 3.—Department of Otolaryngology-Head and Neck Surgery, Chang Gung Memorial Hospital, Linkou, Taoyuan 333, Taiwan. 4.—Institute of Electro-Optical Engineering, Chang Gung University, Guishan, Taoyuan 333, Taiwan. 5.—Department of Electrical and Electronic Engineering, Chung Cheng Institute of Technology, National Defense University, Daxi, Taoyuan 335, Taiwan. 6.—Green Technology Research Center, Chang Gung University, Guishan, Taoyuan 333, Taiwan. 7.—e-mail: [email protected]. 8.—e-mail: [email protected]. 9.—e-mail: [email protected]. 10.—e-mail: [email protected]. 11.—e-mail: [email protected]. 12.—e-mail: [email protected]. 13.—e-mail: [email protected]
A GaN-based metal–semiconductor–metal varactor with a two-dimensional electron gas (2DEG) layer is proposed and fabricated. The capacitance variation of this fabricated varactor biased at different external voltages is studied and measured, and the frequency-dependent capacitance and resistance of the varactor are simulated by a corresponding empirical formula. A high-frequency protective filter is further constructed and placed under a large pulsedcurrent injection in a malicious electromagnetic interference immunity test. The results show that the proposed GaN-based module can reduce the large pulsed current to an acceptably small level. Thus, the GaN-based 2DEG varactor is an attractive candidate for applications designed to protect the upcoming 5G high-frequency system from risks such as electrostatic discharge, lightning, and electromagnetic pulses. Key words: GaN metal–semiconductor–metal varactor, two-dimensional electron gas, malicious electromagnetic interference
INTRODUCTION The prevalence of electric vehicles and high-speed cellular phones in modern society is increasing. However, the size of the electronics involved in these devices is continually decreasing. Thus, the probability that these devices will be exposed to high transient current/voltage from the environment is also increasing. For example, the global positioning system (GPS) may encounter harmful electromagnetic pulses. To protect these electronic
(Received January 8, 2020; accepted March 24, 2020)
systems, which must have precise working properties, from conventional natural or man-made threats,1–5 current protection technologies are used. These technologies can be largely classified into three categories: gas discharge tubes (GDTs),6,7 metal oxide varistors (MOVs),8–10 and transient voltage suppression (TVS)
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