Impact of Sm-substitution and microwave sintering on dielectric and mechanical properties of SrBi 4 Ti 4 O 15 ceramics
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Impact of Sm-substitution and microwave sintering on dielectric and mechanical properties of SrBi4Ti4O15 ceramics A. Rambabu1,*
and K. C. James Raju2
1
Department of Basic Sciences and Humanities, Physics Division, GMR Institute of Technology, Rajam, Andhra Pradesh 532127, India 2 School of Physics, University of Hyderabad, Hyderabad, Telangana 500046, India
Received: 15 June 2020
ABSTRACT
Accepted: 14 September 2020
In quest of finding an alternative for lead-based materials, ferroelectric materials with Bi-layered structure have attracted great attention due to their potential applications in non-volatile memory, electro-optic devices, and microelectromechanical systems. In this work, samarium (Sm)-substituted SrBi4Ti4O15 (SBTi) ceramics have been prepared by solid-state reaction method and sintered using microwave, as well as conventional heating. XRD phase analysis reveals the formation of single phase compound, and there is no effect of Sm-substitution on basic crystal structure. SEM micrographs showed the plate-like structure of grains both in microwave and conventional furnace. Temperaturedependent dielectric properties were investigated in the temperature range 40–600 °C and frequency range 10 kHz–1 MHz. Sm-substitution increases dielectric constant upto Sm * 0.75 and also introduces small relaxor behavior. Hardness and Young’s modulus of SrBi4-xSmxTi4O15 ceramics were measured by nanoindentation. The structural, morphology, dielectric, and mechanical properties of pure and substituted SrBi4Ti4O15 ceramics along with sintering methods have been investigated in detail.
Ó
Springer Science+Business
Media, LLC, part of Springer Nature 2020
1 Introduction Bismuth-layered structure ferroelectrics (BLSFs), referred as Aurivillius phase, are an alternative materials for toxic Pb-based ferroelectric compounds. BLSFs have attracted considerable attention for their potential applications in non-volatile ferroelectric random access memories and high-temperature
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https://doi.org/10.1007/s10854-020-04496-z
piezoelectric devices (actuators, transducers, and sensors) [1–3]. In addition, they have an environmentally friendly lead-free composition. The general formula of BLSFs is (Am - 1BmO3m?1) or (Bi2O2)2? (Am - 1BmO3m?1)2- where m is the number of BO6 octahedral layers and perovskite layers are placed between bismuth oxide (Bi2O2) layers, this kind of structure and composition are favorable for
J Mater Sci: Mater Electron
exhibiting the potential properties for practical applications. Among BLSFs, SrBi4Ti4O15 (SBTi) is a 4-layered (m = 4) compound, it has been observed that these intergrowth structure compounds exhibit compelling and superior ferroelectric properties compared to low layered (m = 2, 3) and individual compounds [4–6]. In spite of several advantages of BLSFs, still there are some drawbacks, which are hindrances for commercial applications. The major drawback with SBTi material is volatization of bismuth during high-temperature sintering,
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