Improved Electron Transport in Ambipolar Organic Field-Effect Transistors with PMMA/Polyurethane Blend Dielectrics
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Article www.springer.com/13233 pISSN 1598-5032 eISSN 2092-7673
Improved Electron Transport in Ambipolar Organic Field-Effect Transistors with PMMA/Polyurethane Blend Dielectrics Grace Dansoa Tabi1,2 Benjamin Nketia-Yawson*,1 Jea Woong Jo1 Young-Yong Noh*,3
Department of Energy and Materials Engineering, Dongguk University, 30 Pildong-ro 1-gil, Jung-gu, Seoul 04620, Korea 2 Research School of Electrical, Energy and Materials Engineering, The Australian National University, Canberra, 2601 Australia 3 Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea 1
Received August 4, 2020 / Revised September 21, 2020 / Accepted September 24, 2020 Abstract: We report improved electron transport in solution-processed ambipolar organic field-effect transistors (OFETs) employing polymer dielectric blends of low-k poly(methyl methacrylate) (PMMA) and polyurethane (PU) elastomer. Ambipolar poly(9,9-dioctylfluorene-alt-benzothiadiazole) (F8BT) OFETs typically showed an unbalanced hole and electron mobilities of 8.7 ± 0.4 × 10-4 and 2.0 ± 0.1 × 10-4 cm2V-1s-1 respectively, using neat PMMA gate dielectric. By controlling the blending ratio of PU (0~50 v%) in the PMMA-PU blend dielectrics, we tuned the charge carrier transport in the F8BT OFETs. The electron mobility gradually increases significantly, resulting in nearly perfect ambipolar characteristics with hole and electron mobilities of 6.0 ± 0.7 × 10-4 and 9.7 ± 0.4 × 10-4 cm2V-1s-1 respectively in PMMA: PU blend of 50:50 v%. The remarkable trend ensues from trapping of hole carriers at the dielectric/semiconductor by the -N-H- and carbonyl group (C=O) interface dipoles in the PU dielectric. The PMMA-PU blend dielectrics demonstrate excellent potentials for high-performance ambipolar OFETs, inverters, and complementary circuits. Keywords: organic field-effect transistors, polyurethane, polymer dielectric blend, ambipolar polymer semiconductor, PMMA.
1. Introduction Organic field-effect transistors (OFETs) have been widely investigated in the development of electronic devices owing to their solution processability and cost-effective benefits enabling versatile applications in flexible display and wearable electronic devices.1,2 Although intrinsic property of the semiconductor material, film microstructure, and device architecture play a significant role in the performance of OFETs, charge transport properties are strongly related to the applied gate dielectric material.1-5 Dielectric engineering of dielectric materials has led to significant improvement in charge-carrier mobility and operational stability in OFET devices and for their use in low-voltage portable electronics.1-4 Consequently, extensive research on gate dielectric materials such as high-k ferroelectric polymers, selfassembled mono-/multilayers, organic-inorganic hybrids, oxide dielectrics, polymer electrolytes, and polymer blend dielectrics have been widely studied in OFETs.1-3,5-11 Particularly, polymer blend dielectrics have shown tremendous successes in e
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