Improved PSi/c-Si and Ga/PSi/c-Si nanostructures dependent solar cell efficiency
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T.C. : SOLAR ENERGY MATERIALS AND APPLICATIONS
Improved PSi/c‑Si and Ga/PSi/c‑Si nanostructures dependent solar cell efficiency Haider A. Kadhum1 · Wafaa Mahdi Salih1 · Ahmed Mahdi Rheima2 Received: 4 June 2020 / Accepted: 10 September 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract Nanometre size semiconductors have been a topic of great interest. Porous silicon surfaces have been fabricated by photoelectrochemical etching for n-type silicon wafers. The objective of this paper focuses on the investigation of the effecting of deposited p-Ga/n-PSi on the performance of silicon solar cells. Gallium thin layer (400 nm) doped n-type porous silicon has been Determined by photoluminescence spectroscopy. Ga doping process was carried out by a physical vapor deposition technique and has subsequently been annealed at 1100 °C for 3 h. The surface morphology resulting from this process was observed by scanning electron microscopy. The measured spectra illustrate that the luminescence peak of PSi-doped Ga was shifted strongly to a shorter wavelength. One luminescence band appears at the peak of about ~ 612 nm for PSi/c-Si; while the photoluminescence spectrum of Ga/PSi/c-Si is produced by two light bands with peaks about ~ 435 and ~ 830 nm. The fabricated solar cell showed good photovoltaic properties were the conversion efficiency increased from (12.25 to 14.8%) and the filling factor increased from (79.47–82.33) in comparison with other solar cells. Keywords Porous silicon · GaNPs · Surface morphology · Photoluminescence · Solar cell
1 Introduction Silicon is a brilliant semiconductor that features greyblushed metal lustre; it is typical for semiconductors, and its resistivity decreases with rising temperatures. Due to the energy gap between the conduction band and valence band in silicon is small [1–3]. Pure silicone is a room temperature isolator which produces an n-type semiconductor when doped by a pnictogen such as phosphorus, arsenic, or antimony [4]. Similarly, doping Si has a semiconductor type p with trivalent elements like boron, aluminium, or gallium. In n-Si, a p–n junction is generated with a mutual fermi level, Therefore, when placed in the sunlight, the energy absorbed allows electrons to pass over the junction and an electric current flows into an external circuit linking all materials. The energy absorbed
* Ahmed Mahdi Rheima [email protected] 1
Departement of Physics, College of Science, Mustansiriyah University, Baghdad, Iraq
Departement of Chemistry, College of Science, Wasit University, Kut, Iraq
2
is therefore used as a diode. Such a solar cell is an energy source for spacecraft [5, 6]. When the interface occurs between two materials of dissimilar crystalline semiconductors like energy gap, lattice constant, and work function, this p–n junction called heterojunction. In present work, semiconductor material was not selected as in the case of most researches, but picking Ga to create a p–n junction. Ga is a trivalent metallic element that has an energy gap (
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