Influence of Graphene Interlayers on Electrode-Electrolyte Interfaces in Resistive Random Accesses Memory Cells
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Influence of Graphene Interlayers on Electrode-Electrolyte Interfaces in Resistive Random Accesses Memory Cells Michael Lübben1, Panagiotis Karakolis2, Anja Wedig1, Vassilios Ioannou2, Pascal Normand2, Panagiotis Dimitrakis2, Ilia Valov1 1 Peter Gruenberg Institut, Forschungszentrum Jülich GmbH, Jülich, Germany 2 Institute of Nanoscience and Nanotechnology, NCSR Demkritos, Athens, Greece
ABSTRACT The behavior of the redox-based resistive switching memories is influenced by chemical interactions between the electrode and the solid electrolyte, as well as by local environment. The existence of different chemical potential gradients is resulting in nanobattery effect lowering the stability of the devices. In order to minimize these effects we introduce a graphene layer at the active electrode – solid electrolyte interface. We observe that graphene is acting as an effective diffusion barrier in the SiO2-based electrochemical metallization cells and acts catalytically on the electrochemical processes prior to resistive switching. INTRODUCTION Redox-based resistive switching memory (ReRAM) cells are the most emerging memory devices for technology nodes
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