Influence of melt convection on distribution of indium inclusions in liquid-encapsulated Czochralski-grown indium phosph
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Influence of melt convection on distribution of indium inclusions in liquid-encapsulated Czochralski-grown indium phosphide crystals Chunmei Chen1,2,3, Ruixia Yang1,* , Niefeng Sun2,3, Shujie Wang2,3, Lijie Fu2,3, Yang Wang2,3, Shusheng Tian1, Zipeng Huang1, Tongnian Sun2,3, Huisheng Liu2,3, Yanlei Shi2,3, Xiaolan Li2,3, and Huimin Shao2,3 1
School of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401, People’s Republic of China China Electronics Technology Group Corp 13th Research Institute, Shijiazhuang 050051, People’s Republic of China 3 China Nanhu Academy of Electronics and Information Technology, Zhejiang 314000, People’s Republic of China 2
Received: 19 June 2020
ABSTRACT
Accepted: 22 September 2020
Indium (In) inclusions have been found in h100i indium phosphide (InP) single crystals grown in In-rich melt by the liquid-encapsulated Czochralski (LEC) method. Two kinds of In inclusions with different morphologies, one is lath-like and the other is polyhedral, have been observed. Most of the In inclusions are lath-like and their long sides are always parallel to the ½011 or ½011 orientation. In (100) InP wafers, these inclusions mainly distribute in two regions viz., center of the wafer and annular belt at a certain distance from the center. These special distributions of In inclusions in InP crystals were found in our experiments for the first time. In order to clarify the cause of the special distributions of In inclusions, numerical simulations have been carried out on the melt convection in the process of InP crystal growth. The results show that the rotations of crystal and crucible significantly affect the number and direction of convection cells in the melt, which have a great influence on the enrichment and distribution of excess In at the solid–liquid interface. Different melt convections modify the radial distributions of excess In atoms near the solid–liquid interface and result in different radial distributions of In inclusions in the crystals.
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Springer Science+Business
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1 Introduction Indium phosphide (InP) is an ideal substrate for the epitaxial growth of high-performance electronic devices [1–4]. The realization of high-performance InP-based devices depends on the growth of high-
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https://doi.org/10.1007/s10854-020-04537-7
quality InP single crystal [5–8]. Inclusions as a kind of volume defect commonly exist in compound crystals. Nizhankovskyi investigated the causes and conditions of longitudinal aggregations of inclusions in sapphire [9]. Schlossmacher studied the inclusions and dislocations in GaAs crystals [10]. Nagaoka
J Mater Sci: Mater Electron
reported Te precipitates and inclusions in Te-rich CdTe crystals [11]. Rudolph found that the size, density, and longitudinal distribution of Te precipitates are directly related to the melt composition [12]. The inclusions in ZnSe [13], ZnTe [14], CdZnTe [15], and CdMnTe [16] have also been studied. N
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