Influence of Oxide-Damage on Degradation-Effects in Bipolar-Transistors
To optimize sub-micron bipolar devices with respect to speed and stability, the precize physical mechanisms have to be understood and modeled, which describe the emitter-base breakdown itself, the charge injection into the emitter-base cap oxide and the r
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Simulation of Semiconductor Devices and Processes Vol. 5
Springer-Verlag Wien GmbH
Univ.-Prof. Dipl.-Ing. Dr. Siegfried Selberherr Dipl.-Ing. Hannes Stippel Dipl.-Ing. Ernst Strasser Institut flir Mikroelektronik Technische Universitat Wien, Austria
This work is subject to copyright. All rights are reserved, whether the whole or part of the material is concerned, specifically those of translation, reprinting, re-use of illustrations, broadcasting, reproduction by photocopying machines or similar means, and storage in data banks. © 1993 Springer-Verlag Wien Originally published by Springer Wien New York in 1993 Softcover reprint ofthe hardcover 1st edition 1993
Typesetting: Camera ready by authors
Printed on acid-free paper
With 530 Figures
ISBN 978-3-7091-7372-5 ISBN 978-3-7091-6657-4 (eBook) DOI 10.1007/978-3-7091-6657-4
SIMULATION OF SEMICONDUCTOR DEVICES AND PROCESSES Vol. 5
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Preface The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of outstanding research and development results in the area of numerical process and device simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconductor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understanding of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device engineers who need reliable numerical simulation tools for characterization, prediction, and development. The conference committee of SISDEP 93 has prepared an excellent program with three invited papers, eighty papers for oral presentation and forty posters, selected from a total of two hundred and twenty-seven abstracts. Their distribution reflects the international nature of the conference: 27 from Germany, 16 from the USA, 14 from France, 10 from Austria, 6 from Italy and Switzerland each, 5 from Canada, England and Japan, 4 from The Netherlands, 3 from Australia and Spain, 2 from Belgium, the Czech Republic, Korea and Lithuania and 1 from Chile, China, Finland, Hungary, Ireland, Poland, Russia, Slovakia, Sweden, Taiwan and Ukraine. SISDEP 93 covers the follow
