InSb Czochralski Growth Single Crystals for InGaSb Substrates
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InSb Czochralski Growth Single Crystals for InGaSb Substrates J. E. Flores Mena1, R. Castillo Ojeda2 and J. Díaz Reyes3 FCE – Benemérita Universidad Autónoma de Puebla, Av. San Claudio y 18 sur, Ciudad Universitaria, Puebla, Puebla, 72500, México. 2 Universidad Politécnica de Pachuca, Ex-Hacienda de Sta. Bárbara, Zempoala, Hidalgo. 43830. México. 3 CIBA-Instituto Politécnico Nacional, Ex-Hacienda de San Juan Molino Km 1.5, Tepetitla, Tlaxcala, 90700, México. Email: [email protected] 1
ABSTRACT The massive crystal growth of single crystal semiconductors materials has been of fundamental importance for the actual electronic devices industry. As a consequence of this one, we can obtain easily a large variety of low cost devices almost as made ones of silicon. Nowadays, the III-V semiconductors compounds and their alloys have been proved to be very important because of their optical properties and applications. It is the case of the elements In, Ga, As, Sb, which can be utilized for the fabrication of radiation sensors. In this work we present the results obtained from the ingots grown by the Czochralski method, using a growth system made in home. These results include anisotropic chemical attacks in order to reveal the crystallographic orientation and the possible polycrystallinity. Isotropic chemical attacks were made to evaluate the etch pit density. Metallographic pictures of the chemical attacks are presented in this work. Among the results of these measurements, the best samples presented in this work showed mobilities of 62.000 cm2/V*s at room temperature and 99.000 cm2/V*s at liquid nitrogen temperature. Typical pit density was 10,000/cm2. The Raman spectra present two dominant peaks associated at Transversal Optical (TO)- and Longitudinal Optical (LO)-InSb, the first vibrational mode is dominant due to the crystalline direction of the ingots and second one is associated to high defects density. KEYWORDS: Crystal Growth, III-V semiconductor compounds, Hall effect, Optical metallography, Raman spectroscopy. INTRODUCTION In, Sb, Ga, As have been among the III-V semiconductor materials extensively studied due to the large optical and electrical properties presented by them [1-5]. InxGa1-xAsySb1-y has proved its utility in the field of optical communications due that is possible the transmission of optical signal in the range of wavelength where the optical fibbers present its minimum of attenuation, additional with these material and their alloys is possible the fabrication of a wide variety of optical electronic devices as infrared detectors, lasers, and so on. Additionally with the study of the nanostructured materials and the nanostructures it is necessary to produce the substrates with the adequate crystalline quality. In summary, the InSb has attracted again the interest of several research groups due to its physical properties and potential applications [6-8]. The InSb ingots studied in this work were grown using a nonconventional Czochralski (Cz) growth system. This system was constructed for the specifi
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