Integrated Optoelectronic Devices on Silicon
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Integrated Optoelectronic Devices on Silicon Di Liang and John E. Bowers2 1 Intelligent Infrastructure Lab, HP Labs, 1501 Page Mill Road, Palo Alto, CA 94304, U.S.A. 2 Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, 93106, U.S.A. 1, 2
ABSTRACT Silicon (Si) has been the dominating material platform of microelectronics over half century. Continuous technological advances in circuit design and manufacturing enable complementary metal-oxide semiconductor (CMOS) chips with increasingly high integration complexity to be fabricated in an unprecedently scale and economical manner. Conventional Sibased planar lightwave circuits (PLCs) has benefited from advanced CMOS technology but only demonstrate passive functionalities in most circumstances due to poor light emission efficiency and weak major electro-optic effects (e.g., Pockels effect, the Kerr effect and the Franz–Keldysh effect) in Si. Recently, a new hybrid III-V-on-Si integration platform has been developed, aiming to bridge the gap between Si and III-V direct-bandgap materials for active Si photonic integrated circuit applications. Since then high-performance lasers, amplifiers, photodetectors and modulators, etc. have been demonstrated. Here we review the most recent progress on hybrid Si lasers and high-speed hybrid Si modulators. The former include distributed feedback (DFB) lasers showing over 10 mW output power and up to 85 oC continuous-wave (cw) operation, compact hybrid microring lasers with cw threshold less than 4 mA and over 3 mW output power, and 4-channel hybrid Si AWG lasers with channel space of 360 GHz. Recently fabricated traveling-wave electro-absorption modulators (EAMs) and Mach-Zehnder interferometer modulators (MZM) on this platform support 50 Gb/s and 40 Gb/s data transmission with over 10 dB extinction ratio, respectively. INTRODUCTION Silicon is the second most abundant element on earth, and has been the dominant material in the microelectronic industry for nearly a half century. Continuous technological advances in circuit design and device manufacturing enable complementary metal-oxide semiconductor (CMOS) chips with increasingly high integration complexity to be fabricated in an unprecedently scale and economical manner. On the other hand, optical interconnects have also revolutionized telecommunications over the past few decades. Single-frequency lasers, high-speed detectors, fiber optics and dense wavelength division multiplexing (DWDM), etc. open up the era of highspeed Internet. Behind the compelling impetus of lower manufacturing cost, higher performance and better energy efficiency, optical interconnects are favored to be an alternative future medium for data transmission in microprocessors. Larger bandwidth, lower power consumption (i.e., lower heat dissipation), smaller interconnect delays, and better resistance to electromagnetic interference are attractive advantages over the conventional metallic (Cu and Al) electrical interconnects. HYBRID SILICON PLATFORM
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