Introduction to Magnetic Random-Access Memory by Bernard Dieny, Ronald B. Goldfarb, and Kyung-Jin Lee
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Introduction to Magnetic Random-Access Memory Bernard Dieny, Ronald B. Goldfarb, and Kyung-Jin Lee Wiley-IEEE Press, 2016 264 pages, $125.00 (e-book $100.99) ISBN 978-1-119-00974-0
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his is an interesting book that gives a deep introduction to and explanation of the physics behind spintronics and magnetic properties of materials used in magnetic random-access memories (MRAMs). It gathers the theoretical concepts of magnetism along with the technological developments of electronic devices for memory and storage applications. It is mainly intended for graduate students, microelectronics/materials engineers, and researchers working on magnetic memory devices. The book is structured in three parts. The first two chapters are focused on spintronic transport phenomena and magnetic materials used for storage and memory devices. Chapter 1 introduces spintronics and the magnetoresistance effect, presenting the quantum formalism required to
describe both giant magnetoresistance and tunneling magnetoresistance phenomena. Chapter 2 discusses properties of the materials used in magnetic tunnel junctions for MRAM devices. The second part provides a more indepth introduction to the theory of magnetism, how it can be sensed and developed in nanostructured materials, and the main concepts required to understand magnetic storage and memory devices. The third part, consisting of the last three chapters, is dedicated to nonvolatile magnetic memory devices, covering the evolution, integration, and compatibility with complementary metal oxide semiconductor circuitry, as well as future perspectives beyond MRAM. Chapter 5 presents a historical overview of the
Electron Nano-Imaging: Basics of Imaging and Diffraction for TEM and STEM Nobuo Tanaka Springer, 2017 333 pages, $99.00 (e-book $74.99) ISBN 978-4-431-56500-0
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s a materials scientist who not only uses transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) for materials characterization, but also teaches classes on electron microscopy, I enjoyed reading this book. It covers a wide range of applications, from basics on electron microscopy and diffraction, to more advanced, newly developed techniques for imaging and diffraction. The book is divided into three parts: Part I covers nano-imaging in TEM mode,
Part II covers nano-imaging in STEM mode, and Part III contains a series of appendices with background theory on imaging and diffraction. The first three chapters focus on basics of imaging and diffraction, with an emphasis on the concepts of imaging in TEM mode compared to an optical (light) microscope, while the appendices have more rigorous math on Fourier transforms and image formation with electromagnetic lenses and the role of aberrations. Chapters 4–7 cover
evolution of MRAMs and different types of structures used in magnetic nonvolatile memory devices, comparing them in terms of fabrication and operational properties. The different functions that each memory device should address, such as storage, read/write process retention, and
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