Ion-modulated transistors on paper using phase-separated semiconductor/insulator blends
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esearch Letters
Ion-modulated transistors on paper using phase-separated semiconductor/insulator blends Fredrik Pettersson and Ronald Österbacka, Department of Natural Sciences/Physics, Åbo Akademi University, Porthaninkatu 3, 20500 Turku, Finland Janne Koskela and Ari Kilpelä, Electronics Laboratory, University of Oulu, PL 4500, FI-90014 Oulu, Finland Tommi Remonen, Department of Natural Sciences/Physics, Åbo Akademi University, Porthaninkatu 3, 20500 Turku, Finland; Department of Chemical Engineering/Polymer Technology, Åbo Akademi University, Piispankatu 8, 20500 Turku, Finland Yanxi Zhang, Saara Inkinen, and Carl-Eric Wilén, Department of Chemical Engineering/Polymer Technology, Åbo Akademi University, Piispankatu 8, 20500 Turku, Finland Roger Bollström and Martti Toivakka, Department of Chemical Engineering/Paper Coating and Converting, Åbo Akademi University, Porthaninkatu 3, 20500 Turku, Finland Anni Määttänen, Petri Ihalainen, and Jouko Peltonen, Department of Natural Sciences/Physical Chemistry, Åbo Akademi University, Porthaninkatu 3, 20500 Turku, Finland Address all correspondence to Fredrik Pettersson at fredrik.pettersson@abo.fi (Received 3 January 2014; accepted 19 March 2014)
Abstract We have used phase-separated poly(3-hexyltiophene) (P3HT)/poly(L-lactic acid) (PLLA) blends to fabricate low-voltage ion-modulated transistors on a rough paper substrate. The semiconductor and insulator are mixed together in a solution and spin casted onto the paper substrate. Owing to their different solubilities and surface energies the P3HT and PLLA will phase separate vertically during the spinning process creating a thin layer of semiconductor on top of the insulator. This thin semiconductor layer, difficult to achieve by other means on an absorbing paper substrate, creates faster ion-modulated transistors. Using this approach we have created ring-oscillators on paper oscillating at 5 Hz.
Introduction Using paper as a substrate for electronics can be advantageous for environmental and economic reasons. One prerequisite is, however, additive and environmentally friendly manufacturing processes using non-toxic and recyclable structures, that can be incinerated or biodegraded without unnecessary harm. A candidate that fulfills such type of criterion is organic electronics.[1,2] The cornerstone of organic electronics is the organic transistor. However, large area manufacturing of organic transistors on well-behaved flexible substrates, such as e.g., polyester films (PET) has been proven challenging to say the least. The use of ion-modulated gate dielectrics for fabricating low-voltage transistors is very promising, due to the high capacitance of the electrolyte[3–7] and also that it is less sensitive to manufacturing on rough substrates.[8] The problem with ion-conducting dielectrics is that there is always the possibility that ions from the electrolyte cause either reduction or oxidization of the semiconductor during operation, slowing down the switching time and operational speed of the transistor. This may avoided by us
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