Kinetics of Atomic Recombination on Silicon Samples in Chlorine Plasma
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Kinetics of Atomic Recombination on Silicon Samples in Chlorine Plasma D. V. Sitanova, * and S. A. Pivovarenoka, ** a
Ivanovo State University of Chemistry and Technology, Ivanovo, 153000 Russia * e-mail: [email protected] ** e-mail: [email protected] Received November 15, 2017; in final form, January 10, 2018
Abstract—The recombination kinetics of chlorine atoms on the wall of a plasmachemical reactor and on silicon samples in the positive column of a glow discharge in Cl2 has been studied experimentally. The rate constants and probabilities of the heterogeneous recombination of chlorine atoms on the plasma limiting surfaces, as well as of the chemical interaction of chlorine atoms with silicon, are calculated. The temperature and time dependences of the probabilities of the chemical interaction of chlorine atoms with silicon are analyzed, and optimal conditions for conducting pulse relaxation experiments are determined. DOI: 10.1134/S1063780X1808007X
1. INTRODUCTION Progress in modern technology requires the development and implementation of advanced innovative methods ensuring precision interaction of electron beams, UV radiation, and flows of chemically active atoms (radicals) with the processed materials. Such methods are of great importance for precision engineering, optomechanics, and electronic industry, because they are able to provide selective local processing of the material surfaces. Material processing in plasma can change the state of a solid surface due to creating unsaturated chemical bonds on it. Depending on the discharge parameters, this can lead to changes in the hydrophilic or hydrophobic properties of the material, i.e., its wettability. The cumulative effect of such processing manifests itself as a change in the total surface energy. On the other hand, by varying the discharge parameters, such as the power deposited in the discharge and the density of the plasma-forming gas, it is possible to provide material etching, which leads to a decrease in the mass of the processed material. In technological applications, such action on the processed elements is achieved using gas discharges [1]. From the practical standpoint, gas-discharge devices operating at atmospheric pressure are more advanced and easy to handle; however, the results of plasma surface processing do not always satisfy requirements to precision and cleanness. Moreover, application of halogen-containing gases as plasma-forming media requires the use of insulated or evacuated reactors. Analysis of the literature data shows that, when etching silicon and some high-melting metals or their alloys, quite satisfactory results on the rate and selec-
tivity of etching were achieved using chlorine plasma [2]. It is also well known that analysis of the kinetics of production and loss of chlorine atoms in the discharge allows one to independently estimate the probabilities of the heterogeneous recombination of chlorine atoms on the plasma limiting surfaces and chemical reactions of chlorine atoms with the processed material. This pro
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