Luminescence Photodynamics of Hybrid-Structured InP/InAsP/InP Nanowires Passivated by a Layer of TOPO-CdSe/ZnS Quantum D
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INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020
Luminescence Photodynamics of Hybrid-Structured InP/InAsP/InP Nanowires Passivated by a Layer of TOPO-CdSe/ZnS Quantum Dots A. I. Khrebtova,*, A. S. Kulaginaa, V. V. Danilovb, E. S. Gromovab, I. D. Skurlovc, A. P. Litvinc, R. R. Reznikc, I. V. Shtroma,d, and G. E. Cirlina,c,d a
Alferov University, Russian Academy of Sciences, St. Petersburg, 194021 Russia b St. Petersburg State Transport University, St. Petersburg, 191031 Russia c ITMO University, St. Petersburg, 197101 Russia d Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg, 190103 Russia *e-mail: [email protected] Received April 15, 2020; revised April 21, 2020; accepted April 21, 2020
Abstract—The results of studies of the decay photodynamics of excited states in a hybrid semiconductor nanostructure formed as an array of InP nanowires with an InAsP nanoinsert that are passivated with a quasiLangmuir trioctylphosphine oxide (TOPO) layer containing colloidal CdSe/ZnS quantum dots are presented. The luminescence spectra and kinetics of InAsP nanoinserts in the near-infrared region at temperatures of 80 and 293 K are recorded. The formation of the layer of TOPO-CdSe/ZnS quantum dots at the surface of InP/InAsP/InP nanowires brings about an increase in the duration of radiative recombination and the appearance of its dependence on temperature. It is established that, in the synthesized structure, there is a type-II heterojunction at the interface between the InAsP nanoinsert and the InP bulk. The influence of interphase processes on an increase in the duration of emission is discussed. Keywords: molecular-beam epitaxy, nanowires, colloidal quantum dots, luminescence DOI: 10.1134/S1063782620090158
1. INTRODUCTION Hybrid semiconductor nanostructures have been extensively studied over the last few years. Of particular interest is the creation of composites from semiconductor materials with different dimensionalities [1–6] for wide practical application. It is obvious that, in order to use the nanocomposites, it is essential to understand the character of interphase photodynamics and the specific features of interactions that couple exciton and surface states. One of the important mechanisms of interaction between the components of composite structures is nonradiative energy transfer [7–9]. Studies carried out over the last few years show that spectroscopic and kinetic methods have proved themselves as an efficient tool for analyzing the photodynamics of nonradiative processes in semiconductor nanocrystals [10–16]. In this case, of considerable importance is adequate mathematical description of experimental dependences relating to photoluminescence (PL) decay kinetics [14, 17–22]. By the example of a hybrid semiconductor nanostructure formed as an array of InP nanowires (NWs) with an InAsP
nanoinsert (NI) that are grown by molecular beam epitaxy (MBE) on a Si(111) substrate, it was shown that the best fit of the spectral and kinetic d
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