Morphology, Defects and Thermal Stability of SiGe grown on SOI

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Morphology, Defects and Thermal Stability of SiGe grown on SOI Qianghua Xie, Mike Kottke, Xiangdong Wang, Mike Canonico, Ted White1, Bich-Yen Nguyen1, Alex Barr2, Shawn Thomas3, Ran Liu4 Advanced Products Research and Development Laboratory, Freescale Semiconductor Inc., Tempe AZ 85248 1 Advanced Products Research and Development Laboratory, Freescale Semiconductor Inc., Austin, TX 78721 2 Crolles-2, Freescale Semiconductor, 870 rue Jean Monnet 38926 Crolles, Frances 3 Embedded Systems and Science Research Laboratory, Motorola Inc., Tempe AZ 85248 4 School of Micro-electronics, Fudan University, Shanghai 200433, China ABSTRACT SiGe/SOI films have been investigated by transmission electron microscopy (TEM), atomic force microscopy (AFM) and Raman spectroscopy. For low Ge composition (~ 20%), strain relaxation in the SiGe layer is minimal (

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