Mott-memories Based on the Narrow Gap Mott Insulators AM 4 Q 8 (A=Ga, Ge ; M = V, Nb, Ta ; Q = S, Se)
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Mott-memories Based on the Narrow Gap Mott Insulators AM4Q8 (A=Ga, Ge ; M = V, Nb, Ta ; Q = S, Se) L. Cario, *,1 E. Janod, 1 J. Tranchant, 1 P. Stoliar, 1,2,3 M. Rozenberg,2 M.-P. Besland1, and B. Corraze 1 1 Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3, France. Email : [email protected] 2 Laboratoire de Physique des Solides, CNRS UMR 8502, Université Paris Sud, Bât 510, 91405 Orsay, France 3 ECyT, Universidad Nacional de San Martín, Campus Miguelete, 1650 San Martin, Argentina. ABSTRACT The narrow gap Mott insulators AM4Q8 (A = Ga, Ge; M= V, Nb, Ta; Q = S, Se) exhibit very interesting electronic properties when pressurized or chemically doped. We have recently discovered that the application of short electrical pulses on these compounds induces a new phenomenon of volatile or nonvolatile resistive switching. The volatile transition appears above threshold electric fields of a few kV/cm, while for higher electric fields, the resistive switching becomes non-volatile. The application of successive very short electric pulses enables to go back and forth between the high and low resistance states. All our results indicate that the resistive switching discovered in the GaM4Q8 compounds does not match with any previously described mechanisms. Conversely, our recent work shows that the volatile resistive switching is related to a purely electronic mechanism which suggests that the AM4Q8 compounds belong to a new class of Mott-memories for which Joule heating, thermochemical or electrochemical effects are not involved. Finally, it is possible to deposit a thin layer of GaV4S8 and to retrieve the reversible resistive switching on a metal-insulator-metal (MIM) device which proves the potential of this new class of Mott-memories for applications. INTRODUCTION The huge non-volatile memory market is led by the Flash technology, used e.g. in Flash cards and Solid State Drives. However, the limit of this technology in downscaling will hinder its development in the near future [1]. Resistive Random Access Memories (RRAM) are currently considered as interesting candidates to overcome this limitation. In RRAM information storage is enabled by a non-volatile and reversible switching between two different resistance states of an active material. This resistive switching is obtained by the simple application of short electric pulses. A large variety of materials are known to exhibit a reversible electric-pulse-induced resistive switching phenomenon, such as transition metal oxides (NiO, TiO2, SrTiO3, manganites …) or copper and silver based chalcogenides. So far, different mechanisms based on thermochemical or electrochemical effects have been proposed to explain the non-volatile resistive switching observed in these materials [2] that all involve local chemical modifications. RRAM based on an electronic rather than chemical phase change is a domain experimentally unexplored so far, despite appealing theoretical predictions stating that resistive sw
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