Novel polyethersulfone dielectric films with high temperature resistance, intrinsic low dielectric constant and low diel
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Novel polyethersulfone dielectric films with high temperature resistance, intrinsic low dielectric constant and low dielectric loss Zejun Pu1,* , Jialing Xia1, Xueyu Liu1, Qi Wang1, Jingyue Liu1, Xiaohang He1, and Jiachun Zhong1 1
College of Materials Science and Engineering, Material Corrosion and Protection Key Laboratory of Sichuan province, Key Laboratories of Fine Chemicals and Surfactants in Sichuan Provincial Universities, Sichuan University of Science & Engineering, Zigong 643000, China
Received: 27 August 2020
ABSTRACT
Accepted: 10 November 2020
In this work, a series of fluorene-containing fluorinated polyethersulfone (PES6AF/BHPF) copolymers with high temperature resistance and intrinsic low dielectric constant (low-e) have been designed and synthesized from 4,40 dichlorophenyl sulfone (DCS) and polyphenol. The performance of obtained PES-6AF/BHPF can be controlled and optimized by controlling the copolymers structure. The thermal and dielectric properties of PES-6AF/BHPF were evaluated comprehensively. The obtained PES-6AF/BHPF copolymers show high glass transition temperatures (Tg) ranging from 200 to 260 °C, and 5% weight loss temperatures (Td5%) is stable up to 500 °C. The e value of PES-6AF/BHPF0% and PES-6AF/BHPF-100% are as low as 2.1 and 2.3, and the loss tangent (tan d) are only 0.0088 and 0.003 at 1 kHz, respectively. In addition, all of PES-6AF/ BHPF films show good stability of dielectric properties in high temperature conditions. More importantly, the PES-6AF/BHPF copolymers are soluble in common solvents (such as DMAc, NMP, DMF, THF). The PES-6AF/BHPF copolymers are amorphous and can be easily cast into transparent and flexible films with tensile strength of 62–74 MPa and an elongation at break of 13.3–15.8%. The outstanding comprehensive properties made it possible to be the most promising polymer candidates for high-performance interlayer dielectrics.
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Springer Science+Business
Media, LLC, part of Springer Nature 2020
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https://doi.org/10.1007/s10854-020-04873-8
J Mater Sci: Mater Electron
1 Introduction With the development of electronic components to high speed and high integration in the semiconductor industry, the interconnection delay of the circuit will increase gradually, which leads to signal transmission delay, noise interference and power loss [1, 2]. In order to better meet the needs of ultra-large scale integration (ULSI) to the high speed, high integration development, it is important to develop high-performance dielectric materials to reduce interconnection delays, energy consumption and crosstalk. Since the signal transmission rate is related to the dielectric constant of the materials, it is particularly important to develop intrinsic low dielectric constant (low-e) materials with outstanding comprehensive properties. Specially, with the rapid development of new generation high-frequency communication technology (such as 5G or 6G communication), research on novel high-performance low-e dielectric materials
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