QFGMOS and FGMOS based low-voltage high performance MI-OTA
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ORIGINAL RESEARCH
QFGMOS and FGMOS based low-voltage high performance MIOTA Bhawna Aggarwal1
•
Ashutosh Gupta2
Received: 12 December 2019 / Accepted: 3 October 2020 Bharati Vidyapeeth’s Institute of Computer Applications and Management 2020
Abstract In this paper, two multiple-input operational transconductance amplifiers (MI-OTA) have been proposed. The proposed-I MI-OTA utilizes FGMOS technology to operate at low supply voltage. This proposed MIOTA provides the flexibility of varying the transconductance of the device by changing the biasing voltage while closely maintaining the linear input voltage range of conventional MI-OTA. However, it operates at lower bandwidth, input resistance and output resistance. To overcome the drawbacks of proposed-I MI-OTA, QFGMOS based MI-OTA has been proposed. This proposed-II MI-OTA operates at low supply voltage while maintaining the high performance behavior of conventional MI-OTA. The proposed circuits have been simulated with the help of TSMC based 0.18 lm CMOS technology using Mentor Graphics Eldospice. Supply voltage of ± 1 V has been used to simulate the proposed circuits and validate their performance characteristics. For input voltage variation of - 0.6 and 0.6 V, approximately linear transconductance in the range of 195.8527 to 187.9106 and 401.419 to 201.6030 lA/V was observed in proposed-I and proposedII MI-OTAs respectively. Simulated values for bandwidth, input resistance, output resistance and power consumed have been observed to be 110.07 MHz, 4.989 GX, 0.8791 MX and 1.8154 mW for proposed-I MI-OTA and 127.56 MHz, 209.872 GX, 2.6218 MX and 1.466 mW for proposed-II MI-OTA respectively. & Bhawna Aggarwal [email protected] Ashutosh Gupta [email protected] 1
NSIT, Delhi University, Delhi, India
2
IIIT, Delhi, India
Keywords Floating gate MOSFET Low-voltage Multiple-input OTA Operational transconductance amplifiers Quasi-floating gate MOSFET Abbreviations CCII Second generation current conveyor FG Floating gate FGMOS Floating gate MOSFET gm Transconductance MI-OTA Multiple-input-OTA MOSFET Metal oxide semiconductor field effect transistor OTA Operational transconductance amplifiers QFGMOS Quasi-floating gate MOSFET VDD Positive supply voltage VSS Negative supply voltage VT Threshold voltage VT,eff Effective threshold voltage
1 Introduction Since, a few decades it has been observed that current mode devices are gaining popularity in analog and mixed signal processing circuits. This is due to the fact that, current-mode devices offer higher bandwidth, wide dynamic range and improved performance parameters in low voltage environment. It has been realized that current mode devices provide all these advantages compared to voltage-mode devices while utilizing lower chip area and consuming less power [1]. Nowadays, OTAs and CCIIs are extensively used as basic building blocks to design currentmode devices. However, OTAs are widely preferred by circuit designers, due to various advantages like wide range of electronically tunable transconducta
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