Quantum Dot Optoelectronic Devices
This book captures cutting-edge research in semiconductor quantum dot devices, discussing preparation methods and properties, and providing a comprehensive overview of their optoelectronic applications. Quantum dots (QDs), with particle sizes in the nanom
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Peng Yu Zhiming M. Wang Editors
Quantum Dot Optoelectronic Devices
Lecture Notes in Nanoscale Science and Technology Series Editors Zhiming M. Wang, Chengdu, China Greg Salamo, Fayetteville, AR, USA Stefano Bellucci, Frascati RM, Italy
More information about this series at http://www.springer.com/series/7544
Peng Yu • Zhiming M. Wang Editors
Quantum Dot Optoelectronic Devices
Editors Peng Yu University of Electronic Science and Technology of China Chengdu, Sichuan, China
Zhiming M. Wang University of Electronic Science and Technology of China Chengdu, Sichuan, China
ISSN 2195-2159 ISSN 2195-2167 (electronic) Lecture Notes in Nanoscale Science and Technology ISBN 978-3-030-35812-9 ISBN 978-3-030-35813-6 (eBook) https://doi.org/10.1007/978-3-030-35813-6 © Springer Nature Switzerland AG 2020 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. The publisher, the authors, and the editors are safe to assume that the advice and information in this book are believed to be true and accurate at the date of publication. Neither the publisher nor the authors or the editors give a warranty, expressed or implied, with respect to the material contained herein or for any errors or omissions that may have been made. The publisher remains neutral with regard to jurisdictional claims in published maps and institutional affiliations. This Springer imprint is published by the registered company Springer Nature Switzerland AG The registered company address is: Gewerbestrasse 11, 6330 Cham, Switzerland
Preface
Nanoscale semiconductor devices have been extensively studied as next-generation alternatives to conventional devices owing to the achievable high integration and functionality. Semiconductor quantum dot (SQD) is a quasi-zero-dimensional structure composed of a small number of atoms. The carriers are three-dimensionally confined and the exciton Bohr radius is highly crowded, allowing quantum dots to exhibit unique and unusual physical, optical, and electronic properties that are absent in larger samples of a semiconductor material. Due to the quantum confinement effect, the energy level of quantum dots is similar to that of atoms with discontinuous energy level structure. The quantum size effect, quantum tunneling effect, Coulomb blocking effect, quantum interference effect, multi-body correlation, nonlinear optical effect, etc.,
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