Room temperature ferromagnetism in Al-doped/Al 2 O 3 -doped ZnO film

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1201-H08-11

Room temperature ferromagnetism in Al-doped/Al2O3-doped ZnO film Y. W. Ma1, J. Ding1, M. Ran1, X. L. Huang1 and C. M. Ng2 1 Department of Materials Science and Engineering, National University of Singapore, Singapore 2 Chartered Semiconductor Manufacturing Ltd, 60 Woodlands Industrial Park D, Singapore

ABSTRACT In this manuscript, we study the magnetic property of Al-doped/Al2O3-doped ZnO films. We found that metallic Al-doped ZnO film shows room temperature ferromagnetism (RTFM). RTFM is correlated with the interaction of Al metallic clusters and ZnO matrix. The charge transfer has been observed between metallic Al and ZnO matrix. Therefore, RTFM in metallic Al doped ZnO may be highly probable due to charge transfer between metallic Al clusters and ZnO matrix. For Al2O3-doped ZnO film (denoted as (Zn1-x, Alx)O), RTFM was found in (Zn1-x, Alx)O film with a certain Al concentration range (16 mol%