Selective-area growth and transport properties of MnAs/InAs heterojunction nanowires
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Selective-area growth and transport properties of MnAs/InAs heterojunction nanowires Shinjiro Hara1,a)
, Matthias T. Elm2, Peter J. Klar3
1
Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-0813, Japan Center for Materials Research, Justus Liebig University of Giessen, Giessen 35392, Germany; Institute of Experimental Physics I, Justus Liebig University of Giessen, Giessen 35392, Germany; and Institute of Physical Chemistry, Justus Liebig University of Giessen, Giessen 35392, Germany 3 Center for Materials Research, Justus Liebig University of Giessen, Giessen 35392, Germany; and Institute of Experimental Physics I, Justus Liebig University of Giessen, Giessen 35392, Germany a) Address all correspondence to this author. e-mail: [email protected] 2
Received: 19 August 2019; accepted: 15 October 2019
The authors summarize the results of selective-area growth of vertical MnAs/InAs heterojunction nanowire (NW) arrays and present a preliminary characterization of the transport properties of a single MnAs/InAs heterojunction NW and a single InAs host NW for MnAs inclusions. During the endotaxy of MnAs after the selective-area growth of host InAs nanowires (NWs) on partially SiO2-masked GaAs(111)B substrates, hexagonal NiAs-type MnAs nanoclusters (NCs), which exhibit spontaneous magnetization at room temperature, are formed with the 〈0001〉 direction oriented parallel to the 〈111〉B direction of the zinc-blende-type InAs host NWs. For InAs host NWs, a large positive ordinary magnetoresistance (MR) effect up to 165% is observed at temperatures between 7 and 280 K. In addition, magnetotransport measurements reveal universal conductance fluctuations and a weak Anderson localization at temperatures up to 20 K due to a charge-accumulation layer formed at the surface. Single MnAs/InAs heterojunction NWs, however, exhibit only a negative MR effect, which is independent of temperature T < 10 K and linearly decreases up to −10% at 10 T with increasing magnetic field. These results reveal the tremendous influence of ferromagnetic NCs on the transport behavior inside the InAs host NWs.
Introduction Since 2000, the extraordinary versatility and the large potential for employing vertical free-standing semiconducting nanowires (NWs) as mesoscopic components in next-generation devices in the areas of electronics, photonics, and biochemical sensing have been demonstrated [1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12]. For example, practical ways for incorporating vertical surroundinggate field-effect transistors (FET) based on vertical NWs into current integrated circuits based on CMOS technologies have been introduced [13]. So far, the majority of the publications on NWs is based on NWs synthesized by the vapor–liquid– solid (VLS) method, a very popular bottom-up fabrication technique. The VLS method typically uses gold nanoparticles as catalysts. However, such conventional metal catalysts may lead to deterioration of the performance of NW devices mainly due to deep-level formation by incorporated meta
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