Self-Consistent Electro-Thermal Approach for Terahertz Frequency Multiplier Design
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Self-Consistent Electro-Thermal Approach for Terahertz Frequency Multiplier Design 1 ´ Carlos G. Perez-Moreno
´ Grajal1 · Jesus
Received: 9 July 2019 / Accepted: 18 September 2020 / © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract Solid-state sources consisting of cascaded Schottky diode-based frequency multipliers are commonly used to generate power at millimeter and submillimeter wave bands. In order to achieve increasing power at those frequencies, first-stage frequency multipliers have to handle a large amount of input power and generate enough output power to drive higher frequency multiplication stages. To that end, an appropriate electro-thermal design of multiplier circuits can result in improvement of power-handling capabilities without degradation of conversion efficiency. This work proposes an approach for the design of frequency multipliers where both electrical and thermal considerations are self-consistently taken into account along the optimization of the Schottky diode structure and the circuit layout. The proposed methodology is validated with the design and test of a split-block waveguide singlechip tripler circuit with output frequency in the 225–325-GHz band. Good agreement between predicted performance and measured results is obtained for a wide input power range and different ambient temperatures. Keywords Electro-thermal modeling · Frequency multiplier · Power-handling capabilities · Schottky diode · Self-consistency · Terahertz
1 Introduction Terahertz frequency electromagnetic radiation spans from 100 GHz through 10 THz [1] covering the whole submillimeter-wave band (300 GHz–3 THz) and most of the millimeter-wave band (30 GHz–300 GHz). Power at terahertz frequencies can be generated by solid-state sources consisting of cascaded frequency multipliers driven by microwave synthesizers and amplifiers [2]. The planar gallium arsenide (GaAs) Carlos G. P´erez-Moreno
[email protected] 1
Information Processing and Telecommunications Center, Universidad Polit´ecnica de Madrid, E.T.S.I. Telecomunicaci´on, Av. Complutense 30, 28040, Madrid, Spain
International Journal of Infrared and Millimeter Waves
Schottky diode is currently the most used solid-state device in the state-of-the-art broadband frequency multiplied sources [3]. The availability of high-power amplifiers at W-band (75–110 GHz) to drive the first stages of frequency multiplier chains has increased the input power that multiplier chips have to handle. This can lead to Schottky junction heating that in turn can result in degradation of multiplier conversion efficiency or catastrophic failure [4]. Increasing the number of anodes per chip can mitigate this problem [5]. However, this is often impractical due to the size limit of the channels where chips are inserted. As an alternative, structures based on in-phase waveguide power-combining [6], single-waveguide in-phase power-combining [7], and on-chip power-combining [8] concepts have resulted in power-handling capability improvement. These approache
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