Semimetal-Semiconductor Transitions in Semimetal Bismuth-Antimony Nanowires Induced by Size Quantization, Strain, and Ma
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Semimetal-Semiconductor Transitions in Semimetal Bismuth-Antimony Nanowires Induced by Size Quantization, Strain, and Magnetic Field Albina A. Nikolaeva1,2, Leonid A. Konopko1,2, Tito E. Huber3, Pavel P. Bodiul1, Ivan A. Popov1, and Eugen F. Moloshnik1 1
Institute of Electronic Engineering and Industrial Technologies, Academy of Sciences of Moldova, Academiei str. 3/3, MD-2028 Chisinau, Republic of Moldova 2 International Laboratory of High Magnetic Fields and Low Temperatures, Wroclaw, Poland 3 Department of Chemistry, Howard University, 500 College St. N.W., DC 20059 Washington, U.S.A. ABSTRACT In this work, we study glass-coated single-crystal Bi98Sb02 wires obtained by liquid phase casting. Semimetal Bi98Sb02 nanowires exhibited a "semiconductor" behavior of the temperature dependence R(T) for wire diameters
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