Single Asperity Tribochemical Wear of Silicon by Atomic Force Microscopy
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0991-C13-03
Single Asperity Tribochemical Wear of Silicon by Atomic Force Microscopy Futoshi Katsuki Corporate Research and Development Laboratories, Sumitomo Metal Industries Limited, 1-8 Fuso-cho, Amagasaki, 660-0891, Japan ABSTRACT We report measurements of single asperity wear on oxidized silicon surface in aqueous KOH using atomic force microscopy (AFM), where the single crystal silicon tip was used both to tribologically load and image the surface. AFM was also operating in the lateral (frictional) force mode (LFM) to investigate the pH dependence of kinetic friction between the tip and the SiO2 surface. We found that the Si tip wear amount strongly depended on the solution pH value and was at a maximum at around pH 10. It was also found that the Si removal volume in moles was approximately equal to that of SiO2 irrespective of the solution pH value. This equality implies that the formation of the Si-O-Si bridge between one Si atom of the tip and one SiO2 molecule of the specimen at the wear interface, followed by the oxidation of the Si surface, finally the bond rupture by the tip movement, the dimeric silica (OH) 3Si-O-Si(OH) 3, including the Si-O-Si bridge is dissolved in the KOH solution. It was also found the frictional force is highly sensitive to the pH values of the solution and peaked at around pH 10. These results indicate that the interfacial reaction would be affected by the frictional force between the Si tip and the SiO2 surface, due to an increased liquid temperature and a compressive stress in Si and SiO2 networks. Strong influence is observed by the pH of the ambient solution confirming the important role of the OH- in the wear mechanism. We present a microscopic removal mechanism which is determined by an interplay of the diffusion of water in Si and SiO2. INTRODUCTION Chemical mechanical polishing (CMP) of Silicon is widely accepted as the planarization process of choice for technologies to produce an atomically flat and defect free surface for further electronic device manufacturing [1]. CMP typically employs hard particles, such as silica (SiO2), where chemical interactions involving the substrate, mechanical stress, and ambient fluid promote controlled material removal [2]. Water in the slurry is certainly the most abundant chemical with which Si and SiO2 surfaces come into contact. Due to the acceleration of the H2O diffusion by the mechanical stress, silica is very reactive with water at the interface of contacts [3,4]. Cook have summarized diffusion of water into SiO2 which takes place at the leading edge of the contact surface due to an increased liquid temperature and compressive stress in the glass network [5]. Pietsch et al. have also proposed the Si removal process in which OH- adsorption on the topmost Si atoms catalyze the corrosive reaction by H2O, resulting in cleavage of Si backbonds [6,7]. In our previous study of the removal mechanism, the formation of a Si-O-Si bridge at the wear interface between Si and SiO2 was found to play an important role in the formation of the sil
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