Soft switching circuit of high-frequency active neutral point clamped inverter based on SiC/Si hybrid device
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ORIGINAL ARTICLE
Soft switching circuit of high‑frequency active neutral point clamped inverter based on SiC/Si hybrid device Jianing Wang1 · Yuanwu Xun1 · Xiaohui Liu1 · Shaolin Yu1 · Nan Jiang2 Received: 20 July 2020 / Revised: 26 September 2020 / Accepted: 29 September 2020 © The Korean Institute of Power Electronics 2020
Abstract Although the silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) is superior to the conventional silicon (Si) insulated gate bipolar transistor in terms of switching performance, the switching losses of SiC devices increase rapidly by hard switching when the switching frequency (fsw) increase to hundreds of kilohertz (kHz). This paper proposes an auxiliary zero-voltage-transition circuit to realize zero-voltage-switching for all of the high-frequency main switches of the active neutral point clamped (ANPC) inverter based on a SiC/Si hybrid device, and zero-current-switching for all of the auxiliary switches. Through soft switching, the switching losses and anti-parallel diode reverse recovery losses of high-frequency SiC MOSFET switches can be further reduced. First, the circuit topology and the operation principle of the soft switching are detailed followed by the design procedure of the parameters. Then, the efficiencies of hard switching and soft switching ANPC inverters are compared with fsw changing from 10 to 200 kHz. To further improve the efficiency of the soft-switching inverter, two improved methods are proposed. The two proposed methods are auxiliary switches paralleling the external diode and utilizing synchronous rectification technology. Finally, a 1 kW, up to 200 kHz frequency ANPC inverter has been built to validate the above analysis. Keywords Active neutral point clamped (ANPC) inverter · SiC/Si hybrid device · Synchronous rectification · Zero-currentswitching (ZCS) · Zero-voltage-switching (ZVS)
1 Introduction With the development of power electronics technology, the power level of inverters continues to increase, and the advantages such as better power capacity and higher voltage of multi-level topologies are becoming more and more obvious, especially the three-level active neutral point clamped (ANPC) topology is being more widely used in medium and large power converters[1–3]. To realize a high power density, the efficiency of the converter should be increased, and the volume of the filter inductor should be reduced by increasing the switching frequency (fsw). A tendency in industrial applications and research areas is to increase fsw * Jianing Wang [email protected] 1
College of Electrical Engineering and Automation, Hefei University of Technology, Hefei, China
Guangdong Institute of Semiconductor Industrial Technology, Guangdong Academy of Sciences, Guangzhou, China
2
using a wide bandgap (WBG) semiconductor device [1], such as a SiC-MOSFET, which brings opportunities for increasing the converter efficiency, fsw, and power density in comparison with its silicon (Si) counterpart [4–6]. Although using SiC devices can eff
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