Sources of Fluxes of Energy, Heat, and Diffusion Heat in a Bipolar Semiconductor: Influence of Nonequilibrium Charge Car
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Sources of Fluxes of Energy, Heat, and Diffusion Heat in a Bipolar Semiconductor: Influence of Nonequilibrium Charge Carriers Yuri G. Gurevich · Igor Lashkevych
Received: 10 October 2012 / Accepted: 23 February 2013 / Published online: 9 March 2013 © Springer Science+Business Media New York 2013
Abstract The equations of energy balance, heat balance, and diffusion heat balance are obtained for a bipolar semiconductor. The roles of nonequilibrium charge carriers and the recombination in the heat transport are established. The expressions for the sources of energy fluxes, heat fluxes, and diffusion heat fluxes are discussed. Both radiative and nonradiative recombinations are studied. Keywords Diffusion heat flux · Diffusion heat source · Energy flux · Energy source · Heat flux · Heat source · Joule effect · Peltier effect · Thomson effect
1 Introduction The thermal and charge transport problems in semiconductors arise when one wants to study the operation of practically all devices of solid-state electronics. This primarily concerns the devices that generate electricity by means of heat. The Seebeck effect lays at the base of the operation of such devices, and the external factor causing the transport phenomena is the presence of the external heater and cooler. The thermal fluxes arise at the presence of the applied voltage. This is connected with such effects as the Peltier effect, the Joule effect, and the Thomson effect that arise automatically in the nonlinear approximation with respect to the electrical current [1].
Y. G. Gurevich Departamento de Física, CINVESTAV-IPN, Apdo., Postal 14-740, 07000 México, DF, México e-mail: [email protected] I. Lashkevych (B) UPIITA-I.P.N., av. Instituto Politécnico Nacional No 2580, col. Barrio La Laguna Ticoman, del. Gustavo A. Madero, 07340 México, DF, México e-mail: [email protected]
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Moreover, the principle of the action of solar cells automatically demands the existence of thermal fluxes [2]. In general, if we have an electrical circuit that includes a bipolar semiconductor or a semiconductor of a p-type, then the electrical current induces the thermal flux and conversely at any type of an external factor causing the transport phenomena. This is connected with the fact that the nonequilibrium electrons and holes arise even in a linear approximation with respect to an electrical current in indicated electrical circuits, and as a result of this, the electron–hole recombination arises too. The latter plays the role of a thermal source that causes an energy heterogeneity [3,4], which must be found from the energy balance equation. Moreover, the energy balance equation has practically never been investigated for bipolar transport, when, even in the linear approximation with respect to the gradient of the temperature (small mismatch of the temperatures), the nonequilibrium charge carriers arise, and consequently, it is natural that the generation–recombination processes must be taken into account [5]. The latter is important
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