Study on Oxidant in Chemical Mechanical Polishing of Copper
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Transactions on Electrical and Electronic Materials https://doi.org/10.1007/s42341-020-00208-w
REGULAR PAPER
Study on Oxidant in Chemical Mechanical Polishing of Copper Xu Rui1 · Wang Yongsheng2 · Wang Yipu1 · Liu Haixu1 · Su Jianxiu1 Received: 3 December 2019 / Revised: 18 May 2020 / Accepted: 30 May 2020 © The Korean Institute of Electrical and Electronic Material Engineers 2020
Abstract In this paper, the polishing experiment of copper was carried out. According to the experimental data, when FeCl3 was selected as oxidant, the material removal rate increases gradually with the increase of oxidant concentration. When other conditions remain unchanged, the material removal rate with larger abrasives was higher than that of smaller abrasives, and the material removal rate of pressure 3 psi was higher than that of pressure 2 psi, and the surface roughness became smaller and smaller. When the abrasive size was 1 µm, oxidant concentration was 5 g/L and the pressure was 3 psi, the material removal rate reaches 206.9 nm/min and the surface roughness reached 8 nm. When the type of oxidant was chosen as the variable, the material removal rate of the mixture of FeCl3 and H2O2 was the highest, the maximum removal rate was 105.45 nm/min when the abrasive size was 1 µm and polishing speed was 80 r/min. The surface roughness was the smallest when FeCl3 was used as oxidant and Ra reaches the smallest 5 nm under the conditions of the abrasive size was 1 µm and polishing speed 80 r/min. The results can be used as a reference for further research the ingredients of polishing slurry in the chemical mechanical polishing of copper. Keywords Copper · Chemical mechanical polishing · Oxidant · Material removal rate · Surface roughness
1 Introduction At present, the multi-layer wiring metal of VLSI is Cu. When the feature size of VLSI is below submicron level, the multi-layer interconnection structure needs to be made many times. Therefore, for each layer of graphic production, the Cu interconnect needs to be made into a global planarization between layers. The chemical mechanical polishing (CMP) technology can effectively realize the global and local planarization in the chip manufacturing process, which has become an indispensable practical technology in the manufacturing of integrated circuits [1]. Chemical mechanical polishing is a technologycombiningthe chemical action and the mechanical action. In the process of chemical mechanical polishing, the oxidantin the polishing slurry react with the surface material of the workpieceunder the action of the catalyst firstly, and a layer * Su Jianxiu [email protected] 1
Henan Institute of Science and Technology, Xinxiang 453003, People’s Republic of China
Zhumadian Technician College, Zhumadian 463000, People’s Republic of China
2
of chemical reaction film is produced on the surface of the workpiece, and then the chemical reaction film shall be removed by abrasives in the polishing slurryunder the support of the polishing pad made of polymer materials and make the surface
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