The dielectric performance of Au/CuCo 5 S 8 / p -Si heterojunction for various frequencies
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The dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies A. Kocyigit1,*
, D. E. Yıldız2, A. Sarılmaz3, F. Ozel3,4, and M. Yıldırım5
1
Department of Electrical and Electronics Engineering, Faculty of Engineering, Igdir University, 76000 Igdir, Turkey Department of Physics, Faculty of Arts and Sciences, Hitit University, 1903 Corum, Turkey 3 Department of Metallurgical and Materials Engineering, Faculty of Engineering, Karamanoglu Mehmetbey University, 70200 Karaman, Turkey 4 Scientific and Technological Research & Application Center, Karamanoglu Mehmetbey University, 70200 Karaman, Turkey 5 Department of Biotechnology, Faculty of Science, Selcuk University, 42130 Konya, Turkey 2
Received: 6 September 2020
ABSTRACT
Accepted: 22 October 2020
CuCo5S8 thiospinel nanocrystals were synthesized by a modified colloidal method, and then it was used as an interfacial layer in the Au/CuCo5S8/p-Si heterojunction device to characterize the dielectric performance of the CuCo5S8 thiospinel. X-ray diffractometer (XRD) was performed to investigate structural behaviors of the CuCo5S8, and the results confirmed the crystalline structure of the CuCo5S8. While the detailed structures of the CuCo5S8 thiospinel were investigated by transmission electron microscope (TEM), the surface morphology was obtained by scanning electron microscope (SEM). Furthermore, the composition of the CuCo5S8 structures was studied and confirmed by the energy dispersive X-ray (EDX). The CuCo5S8 thiospinel were deposited between the Au and p-Si to obtain Au/CuCo5S8/p-Si heterojunction. The impedance spectroscopy technique was employed to determine the voltage- and frequencydependent dielectric properties of the Au/CuCo5S8/p-Si heterojunction. While the frequency was changed from 100 kHz to 1 MHz with 100 kHz interval, the voltage was altered from - 2.5 V to ? 2.5 V. The various dielectric parameters such as complex electric permittivity (dielectric constant (e0 ) and dielectric loss (e00 )), electric modulus (M0 and M00 ), and ac electrical conductivity (r) were extracted from the C–V and G–V measurements and discussed in details. The results highlighted that the Au/CuCo5S8/p-Si heterojunction device has the frequency- and voltage-dependent dielectric characteristics, and can be considered as switching applications.
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Springer Science+Business
Media, LLC, part of Springer Nature 2020
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https://doi.org/10.1007/s10854-020-04742-4
J Mater Sci: Mater Electron
1 Introduction Ternary transition metal chalcogenides (TTMCs) have exceptional potentials for various applications such as photodetectors and photovoltaic devices [1–3]. TTMCs can be employed especially in the applications of device stability and energy conversion efficiency applications [4]. The thiospinel nanocrystals form of TTMCs exhibits superior optical, electrical, and thermal behaviors [5]. Due to having semiconducting behaviors, their band gaps can be changeable based on composition atoms [6]. The vari
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