The Er 3+ and Yb 3+ -related emission from Er,Yb co-implanted Al 0.70 Ga 0.30 As/GaAs substrates prepared MOCVD method
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The Er3+ and Yb3+-related emission from Er,Yb co-implanted Al0.70Ga0.30As/GaAs substrates prepared MOCVD method Tomoyuki.Arai and Shin-ichiro Uekusa Department of Electrical and Electronic Engineering, Meiji University, 1-1-1 Higashi-mita, Tama-ku, Kawasaki, Kanagawa, 214-8571, Japan ABSTRACT Ytterbium (Yb) ions were co-implanted into Al0.70Ga0.30As:Er substrates at room temperature. 3+
The photoluminescence (PL) and PL lifetime were characterized. Co-implanted Yb enhanced 3+ PL intensity of Er3+-related emission. Er3+-related main peak (1538.2 nm), in addition to Yb 2 dose, was enhanced approximately twice. The energy transfers from F5/2 (the first excited state) 2 3+ 4 4 → F7/2 (the grand excited state) of Yb to I11/2 (the second excited state) → I15/2 (the grand 4 4 3+ excited state) and I15/2 → (the first excited state) I15/2 of Er was observed.
INTRODUCTION Rare-earth (RE)-doped semiconductors are of great interest in view of the potential application to optoelectronic devices because of their sharp, temperature-stable emission originating from intra-4f-shell transition of the RE metal [1-3]. In particular, Erbium (Er)-doped semiconductors are a promising material for manufacturing optical devices emitting at 1.54µm, which coincides with the wavelength of minimum absorption in a silica-based optical fiber. For the Er-doped semiconductor, it is important to resolve problems such as poor luminescence intensity and rapid thermal quenching of the Er-related emission of energy transition from the host semiconductor to the intra-4f-shell of Er ions. So far, Er ions have been co-implanted with impurities (carbon, oxygen, nitrogen) into Al0.70Ga0.30As substrates [4-6], be which we realized an increase in the intensity of Er intra-4f-shell luminescence. Since energy gap between the second excited state and the ground state of Er is in similar between the first excited state and the ground state of Yb, co-implanted ytterbium (Yb) was also enhanced Er-related emission when used Al0.70Ga0.30As/GaAs prepared Molecular Beam Epitaxy (MBE) method [7]. In this work, we studied the transfer energy and the optical sensitization of Yb ions co-implanted with Er ions in Al0.70Ga0.30As/GaAs prepared Metal Organic Chemical Vapor Deposition (MOCVD) method.
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EXPERIMENTAL The Er ion was implanted at an energy of 1MeV with a dose of 1 × 1013cm-2, and Yb at 1MeV with a dose 3 × 1012cm-2 at room temperature. Substrates used in this work were grown an undoped (100) Al0.70Ga0.30As/GaAs by MOCVD. After the ion implantation, these samples were thermally annealed at a temperature of 800 ºC for 10minutes by the face-to-face technique in hydrogen atmosphere. Photoluminescence (PL) and PL lifetime measurements were carried out using a 1m-focal-distance double-grating monochromator and a InGaAs photomultiplier (Hamamatsu Photonics R5509-72). Samples were placed into a closed-cycle helium gas cryostat and held at temperatures ranging from 15K. PL was excited by the 488.0nm line of an Ar ion laser with a power of 10mW.
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