Thin Film Growth Using Low-Energy Multi-Ion Beam Deposition System
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THIN FILM GROWTH USING LOW-ENERGY MULTI-ION BEAM DEPOSITION SYSTEM S.Shimizu, N.Sasaki, S.Ogata, O.Tsukakoshi, S.Seki and H.Yamakawa ULVAC JAPAN,Ltd., Hagisono, Chigasaki, Kanagawa, Japan.
ABSTRACT A high-current, low-energy multi-ion beam deposition system has been developed for the fabrication of tailored new materials. This system consists of two ion sources, a dual-sector type mass analyzer and a deceleration system. Several ion species can be extracted successively from the two ion sources by switching the mass analyzer selection. Artificially structured materials, especially having a layered structure, can be grown by the fine control of the growth process of each layer. Ar* ion deceleration characteristics of this ion beam deposition system and preliminary results about the epitaxial growth of Ca film on Si(100) are shown. INTRODUCTION The use of low energy ion beam in thin film growth is very important and attractive in the fabrication of artificially structured materials, because low energy ion bombardment during thin film growth can strongly modify the structural and chemical properties of the resulting film. Various ion-based growth techniques such as ionized cluster beam deposition, mass-separated low energy ion beam deposition and ion beam sputter deposition have been employed for the preparation of these films. Among these, mass-separated low energy ion beam deposition is most attractive, because the growth process can be precisely controlled in this method by selecting the ion species, ion energy and ion flux intensity independently. The authors have used mass-separated, low energy group-V ion beam for the epitaxial growth of ]H-V compound semiconductors[1-3]. Recently, ORNL group has been trying to obtain various epitaxial films such as 6-SiC/ a-SiC [4] , GaAs/Si [5] and GaAs/Ge [6] by low energy direct ion beam deposition. However, the ion beam deposition systems used in these experiments are not satisfactory, because ion beam current is relatively low (several uA-several tens of gA) and the ion species utilized for the film growth is only one with some exceptions [3,5] . Therefore, the further development of the low energy ion beam deposition system [7] is inevitable for the realization of artificially structured new materials. We have developed a high-current, low-energy, multi-ion beam deposition system [8]. In this paper, the deceleration characteristics of this system using Ar + ion and the preliminary results about the epitaxial growth of Ca film on Si(100) substrate are reported. A HIGH-CURRENT,
LOW-ENERGY,
MULTI-ION BEAM DEPOSITION SYSTEM
Figure 1 schematically shows the high-current, low-energy, multi-ion beam deposition system which is developed for the fabrication of artificially structured new films. This system is equipped with two ion sources : one is plasma filament ion source [9] and the other is double hollow cathode ion source [10] . The former is used for the generation of metal ions having relatively high vapor pressures such as As ,P , Ga* . The latter is for refractory met
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