Thin Film Material Parameters Derived from Full Field Nanometric Displacement Measurements in Non-uniform MEMS Geometrie
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U11.28.1
Thin Film Material Parameters Derived from Full Field Nanometric Displacement Measurements in Non-uniform MEMS Geometries Jaime F. Cárdenas-García1, Sungwoo Cho and Ioannis Chasiotis Mechanical and Aerospace Engineering, University of Virginia, P.O. Box 400746, Charlottesville, VA 22904, U.S.A. 1 Mechanical Engineering, University of Maryland College Park, MD 20742, U.S.A.
ABSTRACT MEMS-scale polycrystalline silicon 2 mm thin film specimens fabricated via the Multi User MEMS Processes (MUMPs) have been employed to obtain the non-uniform nanometric displacement fields in the vicinity of prefabricated circular and elliptical micron-sized perforations. For the hole diameter-to-specimen width ratios considered in this work, and for all practical purposes, the displacement solution for a hole in an infinite plate is applicable. This method requires the ability to reliably and repeatably acquire nanometer level displacements on freestanding thin films. These tensile tests were conducted by a custom microtensile tester with the aid of Atomic Force Microscopy (AFM) and a special gripper that makes use of electrostatically assisted UV adhesion to handle and load miniature MEMS specimens. This nonconventional procedure for material parameter determination relies on Digital Image Correlation (DIC) to compare two AFM images, one before and one after specimen loading, and thus compute the nanometer level displacement fields (
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