Tin sulfide (SnS) thin-film solar cells deposited by organic chemical vapor sulfurization based on CdS and high transmit
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Research Letter
Tin sulfide (SnS) thin-film solar cells deposited by organic chemical vapor sulfurization based on CdS and high transmittance Cd(S,O) n-type layers with the superstrate device structure Faruk Ballipinar, Department of Electrical and Computer Engineering, Center for Autonomous Solar Power (CASP), Binghamton University, State University of New York, Binghamton, NY 13902, USA Address all correspondence to Faruk Ballipinar at [email protected] (Received 16 July 2020; accepted 1 October 2020)
Abstract In this work, RF-sputtered metallic tin (Sn) film was sulfurized through di-tert-butyl-disulfide vapor at 350 °C for 150, 180, 210, and 240 min. According to the Raman spectra analysis, 210 min was sufficient to form dominantly SnS film. X-ray diffraction and X-ray photoelectron spectroscopy (XPS) studies of SnS film were evaluated. The n-type window layers CdS and high transmittance Cd(S,O) were deposited by chemical bath deposition through two different baths without and with TX-100 surfactant, respectively. XPS analysis of CdS and Cd(S,O) films was carried out. SnS solar cells formed in the superstrate solar cell device configuration. The photovoltaic performances were evaluated.
Introduction Exploration of newer photo-absorbers materials has actively been pursued for the past few years in order to reduce the manufacture cost and achieve higher photovoltaic cell efficiency goals. The emerging thin-film solar cells have led to focus on easy manufacture, non-toxic, low-cost, and earth-abundant p-type solar absorber materials.[1,2] Tin sulfide (SnS) is an IV–VI binary compound semiconductor. SnS compounds have been investigated for their conduction behavior such as p-type or n-type by controlling the stoichiometry. The SnS (orthorhombic), SnS2 (hexagonal/trigonal), and Sn2S3 (tetragonal) are the most stable phases. The three stable binary compounds (SnS, SnS2, and Sn2S3) have been successfully applied to different semiconductor devices due to their excellent optoelectronic properties.[3–5] The SnS is a p-type semiconductor and has suitable absorption coefficient (>104 cm−1) which shows ideal properties to be applied in the solar cell device as a photo-absorber material.[6–8] SnS films have been processed by a variety of deposition techniques such as atomic layer deposition (ALD),[9] thermal evaporation,[10,11] sputtering,[12] and chemical bath deposition (CBD).[13] Thin-film SnS solar cell devices have been fabricated with two main types of device architectures. In the substrate structure, solar cells are formed over molybdenum (Mo)-coated glass substrates: Mo/p-SnS/n-Buffer-Window layers/TCO/ Ag-contact. In the superstrate structure, solar cells are formed over soda-lime transparent conducting oxide (TCO) glass either fluorine-doped tin oxide (FTO) or indium tin oxide (ITO) in the superstrate structure: TCO/n-Buffer-window layers/p-SnS/Ag– Al-contact. In the case substrate solar cell device structure, the
formation of secondary phases on the Mo such as MoS2 during sulfurization step or on annealing is the main co
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