Waveguide formation of KTiOPO 4 by multienergy MeV He + implantation
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Waveguide formation of KTiOPO4 by multienergy MeV He1 implantation Ke-Ming Wang and Bo-Rong Shi Department of Physics, Shandong University, Jinan 250100, Shandong, China
Pei-Jun Ding, Wei Wang, and W. A. Lanford Department of Physics, University at Albany, Albany, New York 12222
Zhuang Zhuo and Yao-Gang Liu Institute of Crystal Material, Shandong University, Jinan 250100, Shandong, China (Received 18 February 1995; accepted 22 January 1996)
X-cut potassium titanyl phosphate (KTiOPO4 or KTP) was implanted by multienergy MeV He1 implantation with a total dose of 2 3 1016 ionsycm2 at liquid nitrogen temperature. The energy and dose used are as follows: 3.3 MeV and 2 3 1015 ionsycm2, 3.2 MeV and 4 3 1015 ionsycm2 , 3.1 MeV and 4 3 1015 ionsycm2 , and 3.0 MeV and 1.0 3 1016 ionsycm2 to reduce tunneling effect. The 22 dark modes were measured by the isosceles prism coupling method. The 15 bright modes were observed after 250 ±C, 60 min annealing. The result shows that the waveguide formation of KTiOPO4 implanted by MeV He1 is not strongly dependent on the cut direction, which is different from the waveguide formation of KTiOPO4 by ion exchange process.
Potassium titanyl phosphate (KTiOPO4 or KTP) has several potential advantages for optical waveguide devices compared with other materials. Its high nonlinear optical coefficients, high optical damage threshold, large linear electro-optical coefficients, low dielectric constants, and thermally stable phase-matching properties make it useful for second-harmonic generation and waveguides.1,2 The fabrication of planar KTiOPO4 waveguides was first reported by Bierlein et al.3,4 and later also by others.5,6 It is based on an ionic exchange of a monovalent substituent ion with the potassium of the KTiOPO4 . They found that the diffusion is very anisotropic, and channels exist along the z-axis whereby potassium can diffuse with a diffusion coefficient several orders of magnitudes greater than in the x-y plane. For this reason, usually c-face KTiOPO4 wafers are used in the fabrication of the devices.7 Ion implantation produces a variety of optical changes in insulators, including major alterations of the refractive indices. Therefore, ion implantation has been used to form optical waveguide in a variety of materials.8 Zhang et al. have reported the first ion-implanted optical waveguide in the nonlinear material KTiOPO4 . They used a Z-cut KTiOPO4 as a sample implanted by 2.5 MeV He1 to a dose of 1 3 1016 ionsycm2. After 250 ±C, 45 min annealing, four bright modes were observed.9 Also, they reported the second-harmonic generation (SHG) in an ion implanted KTiOPO4 waveguide by using 2.5 and 2.7 MeV He1 .10 In the present work, our main purposes are as follows: first, to investigate the effect of cut direction of J. Mater. Res., Vol. 11, No. 6, Jun 1996
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the KTiOPO4 on the formation of the waveguide; second, to observe the modes in waveguides of KTiOPO4 formed by multi- (four) and
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