Quantum-Cross Tunneling Junction for High Density Memory
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0961-O05-05
Quantum-Cross Tunneling Junction for High Density Memory Hideo Kaiju, Kenji Kondo, and Akira Ishibashi Laboratory of Quantum Electronics, Research Institute for Electronic Science, Hokkaido University, Sapporo, 060-0812, Japan
ABSTRACT We calculated transport properties of edge-to-edge quantum cross structure that consists of two metal nano-ribbons having edge-to-edge configuration with a tunnel barrier and showed current-voltage characteristics depending on the metal-ribbon thickness (5-30 nm), the barrier height (0.5-1.5 eV) and the barrier thickness (0.5-1.0 nm). Interesting behavior of transport properties is that the metal-ribbon thickness affects the current density due to the quantization of nano-ribbon and also the current density, being dependent on the barrier height and the barrier thickness, decreases with high and thick barrier. These calculated results indicate that we can precisely obtain the information on the material sandwiched between two electrodes, such as the barrier height and the barrier thickness, by a fit of experimental data to our derived equation, and these approaches result in a distinction between the sandwiched material and the electrode. INTRODUCTION Molecular electronics has stimulated considerable interest in recent years as a technology that may enable a next generation of high-density memory devices which will offer the expectation of nanometer-scale components [1,2]. A cross-bar circuit of 1-kbit molecular memory at an unprecedented density of 28 Gbits/cm2 (30-nm half-pitch) has been fabricated successfully by nanoimprint lithography that can produce high-resolution patterning [3,4]. However, today’s production procedures such as nanoimprint lithography, electron-beam lithography, and optical lithography, do not have the resolution to achieve less than 30-nm linewidth structures. Recently we have proposed double nano-baumkuchen (DNB) structure, composed of two thin slices of alternating metal/insulator (or semiconductor) hetero layers, as a candidate to augment or replace the conventional lithography technology [5,6]. The DNB structure has potential application in a high-density memory device, the cross point of which can scale down to ultimately a few nanometers feature sizes because the pattering resolution is determined by the metal-deposition rate, ranging from 0.01 nm/s to the order of 0.1 nm/s. Not only memory device but also novel functional phenomenon may emerge from quantum effects arising from the DNB structure having the scale-down active area, corresponding to a small number of molecules sandwiched between the two electrodes. For example, our group has proposed that the DNB structure can serve as a noble potential modulation device, which offers the possibility of modulating the potential symmetry by changing the polarity of electric charges applied in the two electrodes [6]. In addition, it also offers the possibility of combining bottomup structure with top-down system, given in detail elsewhere [5,7]. One element of DNB structure having those feature
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