Non-volatile programmable homogeneous lateral MoTe 2 junction for multi-bit flash memory and high-performance optoelectr
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Non-volatile programmable homogeneous lateral MoTe2 junction for multi-bit flash memory and high-performance optoelectronics Enxiu Wu1 (), Yuan Xie1, Shijie Wang1, Daihua Zhang1, Xiaodong Hu1 (), and Jing Liu1 () State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin 300072, China © Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020 Received: 16 June 2020 / Revised: 5 August 2020 / Accepted: 6 August 2020
ABSTRACT Flash memories and semiconductor p-n junctions are two elementary but incompatible building blocks of most electronic and optoelectronic devices. The pressing demand to efficiently transfer massive data between memories and logic circuits, as well as for high data storage capability and device integration density, has fueled the rapid growth of technique and material innovations. Two-dimensional (2D) materials are considered as one of the most promising candidates to solve this challenge. However, a key aspect for 2D materials to build functional devices requires effective and accurate control of the carrier polarity, concentration and spatial distribution in the atomically thin structures. Here, a non-volatile opto-electrical doping approach is demonstrated, which enables reversibly writing spatially resolved doping patterns in the MoTe2 conductance channel through a MoTe2/hexagonal boron nitride (h-BN) heterostructure. Based on the doping effect induced by the combination of electrostatic modulation and ultraviolet light illumination, a 3-bit flash memory and various homojunctions on the same MoTe2/BN heterostructure are successfully developed. The flash memory achieved 8 well distinguished memory states with a maximum on/off ratio over 104. Each state showed negligible decay during the retention time of 2,400 s. The heterostructure also allowed the formation of p-p, n-n, p-n, and n-p homojunctions and the free transition among these states. The MoTe2 p-n homojunction with a rectification ratio of 103 exhibited excellent photodetection and photovoltaic performance. Having the memory device and p-n junction built on the same structure makes it possible to bring memory and computational circuit on the same chip, one step further to realize near-memory computing.
KEYWORDS 3-bit flash memory, p-n homojunctions, MoTe2, opto-electrical doping, near-memory computing, photovoltaic
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Introduction
Solid-state memories and logic circuits based on p-n junctions are the core components of modern semiconductor electronics. Current computation workload requires access to massive amounts of data, resulting in substantial latency and high energy consumption in moving data between off-chip memory and on-chip logic circuit, which is a key bottleneck hindering the promotion of computation capability known as the memory wall [1]. One promising approach to solve this problem relies on technique innovation to bring large-capacity memories onto the sa
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