Quantum Efficiency Modeling of Amorphous/Crystalline Silicon Heterojunction Photovoltaic Devices
- PDF / 170,309 Bytes
- 6 Pages / 612 x 792 pts (letter) Page_size
- 73 Downloads / 277 Views
M5.14.1
.
Quantum Efficiency Modeling of Amorphous/Crystalline Silicon Heterojunction Photovoltaic Devices F. Khalvati and S. Sivoththaman Electrical & Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada. ABSTRACT Amorphous/crystalline silicon (a-Si/c-Si) heterojunctions are of particular importance in photovoltaic (PV) energy conversion in a cost-effective way. This is principally due to the low temperature (low-T) nature of the process. In this work, we have analyzed a (n)a-Si/(i)a-Si/(p)cSi heterojunction solar cell structure using theoretical models for internal quantum yield (IQY) and I-V behavior. We considered low-quality (low bulk lifetime), cheaper substrates. Thin, low bulk lifetime substrates in combination with a low-T bulk passivation scheme and low rear surface recombination can lead to a cost effective device fabrication process with competitive conversion efficiency. INTRODUCTION a-Si/c-Si heterojunction technology is very attractive for cost-effective PV device fabrication. Since this is essentially a low-T process (
Data Loading...
