Radiation Effects on Carrier Transport
The model equations and boundary conditions reviewed in the preceding chapter describe electrical transport in semiconductor microtransducers in the absence of external fields. As summarized in Sect. 2.7, external fields appreciably alter carrier transpor
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Arokia Nathan Henry Baltes Microtransducer CAD Physical and Computational Aspects
SpringerWienN ewYork
Prof. Dr. Arokia Nathan Dept. of Electrical and Computer Engineering University of Waterloo Waterloo, Ontario N2L 301, Canada
Prof. Dr. Henry Baltes Physical Electronics Laboratory ETH Hoenggerberg CH-8093 Zurich, Switzerland
This work is subject to copyright. All rights are reserved, whether the whole or part of the material is concerned, specifically those of translation, reprinting, re-use of illustrations, broadcasting, reproduction by photocopying machines or similar means, and storage in data banks. © 1999 Springer-Verlag/Wien
Softcover reprint of the hardcover 1st edition 1999 Typesetting: Thomson Press (India) Ltd., New Delhi 110001 Printing: Adolf Holzhausens Nfg. OesmbH, A-1070 Wien Binding: Papyrus, A-1100 Wien Printed on acid-free and chlorine-free bleached paper SPIN: 10637710
With 137 Figures
ISSN 0179-0307
lSBN-13: 978-3-7091-7321-3 DOl: 10.1007/978-3-7091-6428-0
e-lSBN-13: 978-3-7091-6428-0
To Nandanee & Gabriella
Preface
Semiconductor microtransducers have been investigated and developed for more than three decades while their numerical simulation has been underway for less than half that time. Integrated Si microtransducers are realized using microfabrication techniques similar to those for standard ICs. Unlike IC devices, however, microtransducers must interact with their environment, so their numerical simulation is considerably more complex. While the design of ICs aims at suppressing "parasitic effects", microtransducers thrive on the exploitation and optimization of the one or the other such effect. The challenging quest for physical models and simulation tools enabling microtransducer CAD is the topic of this book. The book is intended as a text for graduate students in Electrical Engineering and Physics and as a reference for CAD engineers in the microsystem industry. The authors have been involved in microtransducer modeling since the days of the magnetic sensor modeling tool ALBERTINA, whose development was started in 1983 at the University of Alberta, Edmonton, Canada. We gratefully acknowledge our partners in those pioneering efforts: Prof. H. G. Schmidt-Weinmar and Prof. W. Allegretto. Since then, many colleagues experienced in the art of numerical modeling of semiconductor IC devices have generously shared their valuable insights and tools. It is our pleasure to thank Prof. G. Baccarani, University of Bologna, Prof. S. G. Chamberlain, DALSA Inc., Prof. R. Dutton, Stanford University, Prof. W. Fichtner, ETH-Zurich, Prof. S. C. Jain, IMEC, Prof. D. 1. Roulston, University of Waterloo, Prof. M. Rudan, University of Bologna, Prof. S. Selberherr, University of Vienna (whose book, Analysis and Simulation of Semiconductor Devices, initiated our numerical sensor simulation efforts), and last, but not least, Prof. S. D. Senturia of MIT for his pioneering efforts on CAD of MEMS. We also would like to acknowledge the contributions to this book made by our colleagues, former and
