Reduced-temperature solution-processed transparent oxide low-voltage-operable field-effect transistors
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esearch Letters
Reduced-temperature solution-processed transparent oxide low-voltageoperable field-effect transistors Yu Liu, Department of Materials Science and Engineering, Johns Hopkins University, 206 Maryland Hall, 3400 North Charles Street, Baltimore, MD 21218, USA Kyle McElhinny, Department of Materials Science and Engineering, University of Wisconsin-Madison, 1509 University Avenue, Madison, WI 53706, USA Olivia Alley, Department of Materials Science and Engineering, Johns Hopkins University, 206 Maryland Hall, 3400 North Charles Street, Baltimore, MD 21218, USA Paul G. Evans, Department of Materials Science and Engineering, University of Wisconsin-Madison, 1509 University Avenue, Madison, WI 53706, USA Howard E. Katz, Department of Materials Science and Engineering, Johns Hopkins University, 206 Maryland Hall, 3400 North Charles Street, Baltimore, MD 21218, USA Address all correspondence to Howard E. Katz at [email protected] (Received 5 October 2015; accepted 4 December 2015)
Abstract Metal oxide-based transistors can be fabricated by low-cost, large-area solution processing methods, but involve a trade-off between low processing temperature, facile charge transport and high-capacitance/low-voltage transistor gates. We achieve these simultaneously by fabricating zinc oxide and sodium-incorporated alumina (SA) thin films with temperature not exceeding 200 to 250 °C using aqueous and combustion precursors, respectively. X-ray reflectivity shows a compositionally distinct SA boundary layer forming near the substrate and that a portion of the SA is chemically removed during the subsequent semiconductor deposition. Improved etch resistance and reduced dielectric leakage was obtained when (3-glycidoxypropyl) trimethoxysilane was included in the SA precursor.
Introduction Flexible electronics enable the development of displays, photovoltaics, radio-frequency identification (RFID) tags, and sensors that can be applied in challenging and novel environments or created at low-cost.[1–5] High-throughput, cost-effective largearea processing is critical in expanding the application of these technologies, with solution processing being viewed as particularly facile. Oxide electronic materials, including both crystalline oxide and amorphous ternary and quaternary complex oxides, can provide useful electrical properties, high chemical and thermal stability, and high transparency while employing relatively common and nontoxic elements.[6,7] In addition, oxide materials with high dielectric constant and wide band gap are widely used as gate dielectrics in low-voltage field-effect transistors (FETs), though many of these are formed at high temperatures.[8,9] In flexible electronics applications employing a polymer substrate, low processing temperatures (10,000) induced by gate voltage. Based on an analysis of more than 30 FETs, the maximum saturation field-effect mobility was 0.7 cm2/V/s. A representative transfer curve is shown in Fig. 2(b), for which the on/off current ratio was 6.2 × 104, the threshold voltage was 5 V, and the sub
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