Sol-gel-derived transparent metal oxide flexible field effect transistors
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RECENT TRENDS IN ENVIRONMENT AND SUSTAINABLE DEVELOPMENT
Sol-gel-derived transparent metal oxide flexible field effect transistors Priyanka Londhe 1 & Anjali Athawale 1 & Nandu B. Chaure 2 Received: 21 February 2020 / Accepted: 10 August 2020 # Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract ZnO and ZnO:Al thin films have been successfully synthesized by simple solution processable method at low temperature. Highly crystalline (002) preferentially oriented, uniform, and smooth ZnO:Al thin films are produced. The electrical, J-V and CV, measurements revealed higher current flow and more carrier concentration, respectively, for ZnO:Al samples compared with pristine ZnO. ZnO- and ZnO:Al-based field effect transistors (FETs) were fabricated using SiO2 and TiO2 gate dielectric layers onto flexible plastic, ITO and rigid, p-Si substrates. The ZnO:Al-based FETs measured better transistor performance with both SiO2 and TiO2 gate dielectrics as compared with ZnO-based TFTs. The saturated field effect mobilities 5.78 and 4.96 cm2/Vs were measured for ZnO:Al-based TFTs with SiO2 and TiO2 dielectrics, which reasonably higher than 0.51 and 0.43 cm2/Vs, respectively, measured for pristine ZnO TFTs. The effect of smooth surface and reduced grain boundaries of ZnO:Al layer contributed to measure the low-interface trap density and trap density at grain boundaries. The reported procedure can be applicable to produce large area transparent electronics onto flexible plastic substrates. Keywords Al-doped ZnO . Electrical conductivity . Field effect transistors . Saturated mobility
Introduction The wide band gap semiconductor materials have been studied extensively because of their applicability in optoelectronic devices, transparent electronics, gas sensors, power electronics, etc. Transparent binary and ternary conductive metal oxides have excellent electrical and optical properties. Transparent metal oxide thin film transistors emerged as one of the alternatives to traditional amorphous silicon (a-Si) and polycrystalline-Si (poly-Si) thin film transistors (TFTs) for next-generation flat panel displays and Internet of things applications due to their high electron mobilities (10–50 cm2/ Vs), good optical transparency in visible range, low processing temperature (even at room temperature), low manufacturing cost, large-scale area manufacturability, and feasibility of Responsible Editor: Philippe Garrigues * Nandu B. Chaure [email protected] 1
Department of Chemistry, Savitribai Phule Pune University (formerly University of Pune), Pune 411007, India
2
Department of Physics, Savitribai Phule Pune University (formerly University of Pune), Pune 411007, India
fabrication of TFTs onto flexible substrates. First attempt was made to fabricate the metal oxide–based TFTs with SnO2 in 1960. Subsequently, in the beginning of the twentieth century, tremendous research was carried out on polycrystalline metal oxide–based TFTs, like indium oxide, tin oxide, and zinc oxide (Wang et al. 2006; Presley et al. 2004; Hoffman
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